公开(公告)号：US20230112936A1

公开(公告)日：2023-04-13

申请号：US18081513

申请日：2022-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.,

Inventor： Garming LIANG ,  Simon CHAI ,  Tzu-Jin YEH ,  En-Hsiang YEH ,  Wen-Sheng CHEN

IPC: H03F3/21 ,  H01L27/06 ,  H01L27/092 ,  H03F1/02

Abstract: Disclosed is an amplifying circuit and method. In one embodiment, an amplifying circuit, includes: a common-gate (CG) amplifier, wherein the CG amplifier comprises a first transistor, wherein source terminal and body terminal of the first transistor is coupled together through a first resistor.

公开(公告)号：US20240088842A1

公开(公告)日：2024-03-14

申请号：US18513103

申请日：2023-11-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Garming LIANG ,  Simon CHAI ,  Tzu-Jin YEH ,  En-Hsiang YEH ,  Wen-Sheng CHEN

IPC: H03F3/21 ,  H01L27/06 ,  H01L27/092 ,  H03F1/02

CPC classification number: H03F3/211 ,  H01L27/0629 ,  H01L27/0928 ,  H03F1/0205 ,  H03F1/223

Abstract: Disclosed is an amplifying circuit and method. In one embodiment, an amplifying circuit, includes: a common-gate (CG) amplifier, wherein the CG amplifier comprises a first transistor, wherein source terminal and body terminal of the first transistor is coupled together through a first resistor.

公开(公告)号：US20220385251A1

公开(公告)日：2022-12-01

申请号：US17883580

申请日：2022-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Hsun LO ,  Wen-Sheng CHEN ,  En-Hsiang YEH ,  Tzu-Jin YEH

IPC: H03F3/45

Abstract: A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first transconductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.

公开(公告)号：US20200162041A1

公开(公告)日：2020-05-21

申请号：US16673765

申请日：2019-11-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Garming LIANG ,  Simon CHAI ,  Tzu-Jin YEH ,  En-Hsiang YEH ,  Wen-Sheng CHEN

IPC: H03F3/21 ,  H01L27/06 ,  H01L27/092 ,  H03F1/02

Abstract: Disclosed is an amplifying circuit and method. In one embodiment, an amplifying circuit, includes: a common-gate (CG) amplifier, wherein the CG amplifier comprises a first transistor, wherein source terminal and body terminal of the first transistor is coupled together through a first resistor.

公开(公告)号：US20180115198A1

公开(公告)日：2018-04-26

申请号：US15299053

申请日：2016-10-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Sheng CHEN ,  An-Hsun LO ,  En-Hsiang YEH ,  Tzu-Jin YEH

IPC: H02J50/80 ,  H02J50/23

CPC classification number: H02J50/23 ,  H02J50/20 ,  H04B5/0031 ,  H04B5/0037

Abstract: A wireless transmitter includes a an amplifier; and a switchable transformer, coupled to the amplifier, wherein the amplifier is configured to be coupled to the switchable transformer in first and second configurations, wherein the first configuration causes the amplifier to provide a first output impedance to the switchable transformer, and wherein the second configuration causes the amplifier to provide a second output impedance to the switchable transformer, the first and second output impedances being different from each other.

公开(公告)号：US20180131332A1

公开(公告)日：2018-05-10

申请号：US15344133

申请日：2016-11-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Hsun LO ,  Wen-Sheng CHEN ,  En-Hsiang YEH ,  Tzu-Jin YEH

IPC: H03F1/34 ,  H03F3/193 ,  H03F1/56 ,  H03F3/45

CPC classification number: H03F1/342 ,  H03F1/565 ,  H03F3/193 ,  H03F3/45179 ,  H03F3/45475 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2203/45018 ,  H03F2203/45306

Abstract: A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first trans conductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.