公开(公告)号：US20170256640A1

公开(公告)日：2017-09-07

申请号：US15601576

申请日：2017-05-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L29/0653 ,  H01L29/66545 ,  H01L29/66795

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.

公开(公告)号：US10269963B2

公开(公告)日：2019-04-23

申请号：US15601576

申请日：2017-05-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chi Wu ,  Chai-wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC分类号： H01L21/768 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.