公开(公告)号：US20220336614A1

公开(公告)日：2022-10-20

申请号：US17231925

申请日：2021-04-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Ching Wang ,  Chung-I Yang ,  Jon-Hsu Ho ,  Wen-Hsing Hsieh ,  Chung-Wei Wu ,  Zhiqiang Wu

IPC: H01L29/45 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/764 ,  H01L29/66

Abstract: Source/drain silicide that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a first channel layer disposed over a substrate, a second channel layer disposed over the first channel layer, and a gate stack that surrounds the first channel layer and the second channel layer. A source/drain feature disposed adjacent the first channel layer, second channel layer, and gate stack. The source/drain feature is disposed over first facets of the first channel layer and second facets of the second channel layer. The first facets and the second facets have a (111) crystallographic orientation. An inner spacer disposed between the gate stack and the source/drain feature and between the first channel layer and the second channel layer. A silicide feature is disposed over the source/drain feature where the silicide feature extends into the source/drain feature towards the substrate to a depth of the first channel layer.

公开(公告)号：US20230369495A1

公开(公告)日：2023-11-16

申请号：US18357832

申请日：2023-07-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Shan Lu ,  Chung-I Yang ,  Kuo-Yi Chao ,  Wen-Hsing Hsieh ,  Jiun-Ming Kuo ,  Chih-Ching Wang ,  Yuan-Ching Peng

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/785 ,  H01L29/66545 ,  H01L29/42392 ,  H01L29/6681 ,  H01L2029/7858

Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.

公开(公告)号：US20220115530A1

公开(公告)日：2022-04-14

申请号：US17069409

申请日：2020-10-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Shan Lu ,  Chung-I Yang ,  Kuo-Yi Chao ,  Wen-Hsing Hsieh ,  Jiun-Ming Kuo ,  Chih-Ching Wang ,  Yuan-Ching Peng

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423

Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.

公开(公告)号：US12218214B2

公开(公告)日：2025-02-04

申请号：US17231925

申请日：2021-04-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Ching Wang ,  Chung-I Yang ,  Jon-Hsu Ho ,  Wen-Hsing Hsieh ,  Chung-Wei Wu ,  Zhiqiang Wu

IPC: H01L29/45 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/764 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: Source/drain silicide that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a first channel layer disposed over a substrate, a second channel layer disposed over the first channel layer, and a gate stack that surrounds the first channel layer and the second channel layer. A source/drain feature disposed adjacent the first channel layer, second channel layer, and gate stack. The source/drain feature is disposed over first facets of the first channel layer and second facets of the second channel layer. The first facets and the second facets have a (111) crystallographic orientation. An inner spacer disposed between the gate stack and the source/drain feature and between the first channel layer and the second channel layer. A silicide feature is disposed over the source/drain feature where the silicide feature extends into the source/drain feature towards the substrate to a depth of the first channel layer.

公开(公告)号：US11735665B2

公开(公告)日：2023-08-22

申请号：US17811428

申请日：2022-07-08

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Shan Lu ,  Chung-I Yang ,  Kuo-Yi Chao ,  Wen-Hsing Hsieh ,  Jiun-Ming Kuo ,  Chih-Ching Wang ,  Yuan-Ching Peng

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/785 ,  H01L29/42392 ,  H01L29/6681 ,  H01L29/66545 ,  H01L2029/7858

Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.

公开(公告)号：US12230712B2

公开(公告)日：2025-02-18

申请号：US18357832

申请日：2023-07-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Shan Lu ,  Chung-I Yang ,  Kuo-Yi Chao ,  Wen-Hsing Hsieh ,  Jiun-Ming Kuo ,  Chih-Ching Wang ,  Yuan-Ching Peng

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.

公开(公告)号：US20230387240A1

公开(公告)日：2023-11-30

申请号：US18447183

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Ching Wang ,  Chung-I Yang ,  Jon-Hsu Ho ,  Wen-Hsing Hsieh ,  Chung-Wei Wu ,  Zhiqiang Wu

IPC: H01L29/45 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/285 ,  H01L21/306 ,  H01L21/764 ,  H01L21/02

CPC classification number: H01L29/45 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/78618 ,  H01L29/78696 ,  H01L21/0259 ,  H01L21/28518 ,  H01L21/30604 ,  H01L21/764 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66553 ,  H01L29/66742

Abstract: Source/drain silicide that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a first channel layer disposed over a substrate, a second channel layer disposed over the first channel layer, and a gate stack that surrounds the first channel layer and the second channel layer. A source/drain feature disposed adjacent the first channel layer, second channel layer, and gate stack. The source/drain feature is disposed over first facets of the first channel layer and second facets of the second channel layer. The first facets and the second facets have a (111) crystallographic orientation. An inner spacer disposed between the gate stack and the source/drain feature and between the first channel layer and the second channel layer. A silicide feature is disposed over the source/drain feature where the silicide feature extends into the source/drain feature towards the substrate to a depth of the first channel layer.

公开(公告)号：US20220344502A1

公开(公告)日：2022-10-27

申请号：US17811428

申请日：2022-07-08

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Shan Lu ,  Chung-I Yang ,  Kuo-Yi Chao ,  Wen-Hsing Hsieh ,  Jiun-Ming Kuo ,  Chih-Ching Wang ,  Yuan-Ching Peng

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423

Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.