公开(公告)号：US20240332396A1

公开(公告)日：2024-10-03

申请号：US18194199

申请日：2023-03-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chi-Ming CHEN ,  Chia-Shiung TSAI ,  Eugene CHEN ,  Chung-Yuan LI

IPC: H01L29/66 ,  B32B43/00

CPC classification number: H01L29/66462 ,  B32B43/006 ,  B32B2310/0843

Abstract: Some implementations described herein provide a temporary carrier structure and techniques to form a semiconductor device on the temporary carrier structure. The temporary carrier structure includes a core layer formed from a material having a first bandgap lattice constant. The temporary carrier structure further includes a debonding layer formed from another material having a second bandgap energy constant that is lesser relative to the first bandgap lattice constant. Techniques to form the semiconductor device including a forming substrate layer of the semiconductor device on the temporary carrier structure, where a material of the substrate layer and the material of the core layer have a same approximate coefficient of thermal expansion. The techniques further include providing energy (e.g., electromagnetic waves from a laser source) to the debonding layer to remove the core layer from the temporary carrier structure.

公开(公告)号：US20240355902A1

公开(公告)日：2024-10-24

申请号：US18303148

申请日：2023-04-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hung-Chang CHANG ,  Chia-Shiung TSAI ,  Eugene CHEN

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/7786

Abstract: Some implementations herein describe a carrier structure and techniques of forming a semiconductor device using the carrier structure. The carrier structure includes a core layer formed from a layer of a high bandgap material, a backside layer stack formed on a backside surface of the layer of the high bandgap material, and a frontside layer stack formed on a frontside surface of the layer of the high bandgap material. The backside layer stack includes a backside chucking layer (e.g., a layer of a polysilicon material) that intervenes between a backside diffusion barrier layer and a backside adhesion layer. The frontside layer stack includes a corresponding frontside diffusion barrier layer that interfaces directly with a corresponding frontside adhesion layer. A corresponding frontside chucking layer has been eliminated. By eliminating the frontside chucking layer, a likelihood of thermally-induced stresses and/or strains due to a coefficient of thermal expansion mismatch between layers of the frontside layer stack and other layers of the semiconductor device, during formation of the semiconductor device, is reduced.