公开(公告)号：US20240266411A1

公开(公告)日：2024-08-08

申请号：US18631808

申请日：2024-04-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Jier YANG

IPC分类号： H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/41775 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/458 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/78696

摘要： In a method of manufacturing a semiconductor device, a fin structure in which first semiconductor layers and second semiconductor layers are alternately stacked is formed, a sacrificial gate structure is formed over the fin structure, a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched thereby forming a source/drain space, a stressor layer is formed in the source/drain space, a metal gate structure including part of the second semiconductor layer as channel regions is formed by a gate replacement process, after the metal gate structure is formed, the stressor layer is at least partially removed, and a source/drain contact comprising metal or a metallic material is formed in the source/drain space from which the stressor layer is at least partially removed.

公开(公告)号：US20220310806A1

公开(公告)日：2022-09-29

申请号：US17367869

申请日：2021-07-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Sheng-Jier YANG

IPC分类号： H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L27/088 ,  H01L29/45 ,  H01L29/40 ,  H01L29/66

摘要： In a method of manufacturing a semiconductor device, a fin structure in which first semiconductor layers and second semiconductor layers are alternately stacked is formed, a sacrificial gate structure is formed over the fin structure, a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched thereby forming a source/drain space, a stressor layer is formed in the source/drain space, a metal gate structure including part of the second semiconductor layer as channel regions is formed by a gate replacement process, after the metal gate structure is formed, the stressor layer is at least partially removed, and a source/drain contact comprising metal or a metallic material is formed in the source/drain space from which the stressor layer is at least partially removed.