公开(公告)号：US20230253433A1

公开(公告)日：2023-08-10

申请号：US18301714

申请日：2023-04-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Keng-Ying Liao ,  Yu-Chu Lin ,  Chih Wei Sung ,  Shih Sian Wang ,  Chi-Chung Jen ,  Yu-chien Ku ,  Yen-Jou Wu ,  Huai-jen Tung ,  Po-Zen Chen

IPC分类号： H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/1464 ,  H01L27/14683

摘要： A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.

公开(公告)号：US20220367559A1

公开(公告)日：2022-11-17

申请号：US17873845

申请日：2022-07-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Keng-Ying Liao ,  Huai-jen Tung ,  Chih Wei Sung ,  Po-Zen Chen ,  Yu-chien Ku ,  Yu-Chu Lin ,  Chi-Chung Jen ,  Yen-Jou Wu ,  Tsun-Kai Tsao ,  Yung-Lung Yang

IPC分类号： H01L27/146

摘要： A method includes forming a dielectric layer over a first surface of a semiconductor layer, the dielectric layer including a metallization layer. The method includes forming an opening to expose a portion of the dielectric layer. The method includes forming a buffer oxide layer lining the opening. The method includes forming, according to a patternable layer, a recess in the buffer oxide layer partially extending from a second surface of the buffer oxide layer. The method includes removing the patternable layer. The method includes extending the recess through the buffer oxide layer and a portion of the dielectric layer to expose a portion of the metallization layer. The method includes filling the recess with a conductive material to form a pad structure configured to provide electrical connection to the metallization layer.

公开(公告)号：US11430909B2

公开(公告)日：2022-08-30

申请号：US16865819

申请日：2020-05-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih Wei Sung ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Yen-Jou Wu ,  Po-Zen Chen ,  Su-Yu Yeh ,  Ching-Chung Su

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L23/544

摘要： A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

公开(公告)号：US20210036179A1

公开(公告)日：2021-02-04

申请号：US16865819

申请日：2020-05-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih Wei Sung ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Yen-Jou Wu ,  Po-Zen Chen ,  Su-Yu Yeh ,  Ching-Chung Su

IPC分类号： H01L31/18

摘要： A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.