公开(公告)号：US20240413150A1

公开(公告)日：2024-12-12

申请号：US18790013

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Company , Ltd.

Inventor： Chieh-Ping Wang ,  Tai-Chun Huang ,  Yung-Cheng Lu ,  Ting-Gang Chen ,  Chi On Chui

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H10B99/00

Abstract: A semiconductor device with isolation structures of different dielectric constants and a method of fabricating the same are disclosed. The semiconductor device includes fin structures with first and second fin portions disposed on first and second device areas on a substrate and first and second pair of gate structures disposed on the first and second fin portions. The second pair of gate structures is electrically isolated from the first pair of gate structures. The semiconductor device further includes a first isolation structure interposed between the first pair of gate structures and a second isolation structure interposed between the second pair of gate structures. The first isolation structure includes a first nitride liner and a first oxide fill layer. The second isolation structure includes a second nitride liner and a second oxide fill layer. The second nitride layer is thicker than the first nitride layer.

公开(公告)号：US11532479B2

公开(公告)日：2022-12-20

申请号：US16837607

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Gang Chen ,  Wan-Hsien Lin ,  Chieh-Ping Wang ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L21/764 ,  H01L21/28 ,  H01L21/8238 ,  H01L23/535 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66

Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.

公开(公告)号：US20210313181A1

公开(公告)日：2021-10-07

申请号：US16837607

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Gang Chen ,  Wan-Hsien Lin ,  Chieh-Ping Wang ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L21/28 ,  H01L23/535 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66 ,  H01L21/764 ,  H01L21/8238

Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.