公开(公告)号：US20230050640A1

公开(公告)日：2023-02-16

申请号：US17569680

申请日：2022-01-06

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Chih-Yu CHANG ,  Ken-Ichi GOTO ,  Yen-Chieh HUANG ,  Min-Kun DAI ,  Han-Ting TSAI ,  Sai-Hooi YEONG ,  Yu-Ming LIN ,  Chung-Te LIN

IPC: G01N27/22

Abstract: A method of characterizing a wide-bandgap semiconductor material is provided. A substrate is provided, which includes a layer stack of a conductive material layer, a dielectric material layer, and a wide-bandgap semiconductor material layer. A mercury probe is disposed on a top surface of the wide-bandgap semiconductor material layer. Alternating-current (AC) capacitance of the layer stack is determined as a function of a variable direct-current (DC) bias voltage across the conductive material layer and the wide-bandgap semiconductor material layer. A material property of the wide-bandgap semiconductor material layer is extracted from a profile of the AC capacitance as a function of the DC bias voltage.

公开(公告)号：US20230387186A1

公开(公告)日：2023-11-30

申请号：US18363217

申请日：2023-08-01

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Chun-Chieh LU ,  Mauricio MANFRINI ,  Marcus Johannes Hendricus VAN DAL ,  Chih-Yu CHANG ,  Sai-Hooi YEONG ,  Yu-Ming LIN ,  Georgios VALLIANITIS

IPC: H01G4/33 ,  H01L21/3213 ,  H01L21/321

CPC classification number: H01L28/40 ,  H01L21/32136 ,  H01L21/3212

Abstract: Embodiments include structures and methods for fabricating an MFM capacitor having a plurality of metal contacts. An embodiment may include a first metal strip, disposed on a substrate and extending in a first direction, a ferroelectric blanket layer, disposed on the first metal strip, a second metal strip, disposed on the ferroelectric blanket layer and extending in a second direction different from the first direction, and a plurality of metal contacts disposed between the first metal strip and the second metal strip and located within an intersection region of the first metal strip and the second metal strip.

公开(公告)号：US20210376055A1

公开(公告)日：2021-12-02

申请号：US17222193

申请日：2021-04-05

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Chun-Chieh LU ,  Mauricio MANFRINI ,  Marcus Johannes Hendricus VAN DAL ,  Chih-Yu CHANG ,  Sai-Hooi YEONG ,  Yu-Ming LIN ,  Georgios VALLIANITIS

IPC: H01L49/02 ,  H01L21/321 ,  H01L21/3213

Abstract: Embodiments include structures and methods for fabricating an MFM capacitor having a plurality of metal contacts. An embodiment may include a first metal strip, disposed on a substrate and extending in a first direction, a ferroelectric blanket layer, disposed on the first metal strip, a second metal strip, disposed on the ferroelectric blanket layer and extending in a second direction different from the first direction, and a plurality of metal contacts disposed between the first metal strip and the second metal strip and located within an intersection region of the first metal strip and the second metal strip.