公开(公告)号：US20220356596A1

公开(公告)日：2022-11-10

申请号：US17308347

申请日：2021-05-05

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

发明人： Kuo-Lung HOU ,  Ming-Hsien LIN

IPC分类号： C25D21/12 ,  C25D7/12 ,  C25D5/54 ,  C25D17/00 ,  C25D17/02

摘要： A plating system is provided. The plating system includes an electroplating chamber defining a plating area within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating area of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating area of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating area.

公开(公告)号：US20220356560A1

公开(公告)日：2022-11-10

申请号：US17314261

申请日：2021-05-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

发明人： Sheng-Ying WU ,  Ming-Hsien LIN ,  Po-Wei WANG ,  Hsiao-Feng LU

IPC分类号： C23C14/54 ,  C23C14/02 ,  C23C14/56

摘要： A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie the wafer. An edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target. A first portion of the edge of the target has a first surface roughness. The first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target. The second portion of the edge of the target has a second surface roughness less than the first surface roughness.

公开(公告)号：US20240360584A1

公开(公告)日：2024-10-31

申请号：US18768106

申请日：2024-07-10

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Kuo-Lung HOU ,  Ming-Hsien LIN

IPC分类号： C25D21/12 ,  C25D5/54 ,  C25D7/12 ,  C25D17/00 ,  C25D17/02

CPC分类号： C25D21/12 ,  C25D5/54 ,  C25D7/12 ,  C25D17/001 ,  C25D17/02

摘要： A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

公开(公告)号：US20230257901A1

公开(公告)日：2023-08-17

申请号：US18138346

申请日：2023-04-24

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Kuo-Lung HOU ,  Ming-Hsien LIN

IPC分类号： C25D21/12 ,  C25D7/12 ,  C25D17/02 ,  C25D17/00 ,  C25D5/54

CPC分类号： C25D21/12 ,  C25D7/12 ,  C25D17/02 ,  C25D17/001 ,  C25D5/54

摘要： A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.