公开(公告)号：US5296404A

公开(公告)日：1994-03-22

申请号：US779497

申请日：1991-10-24

申请人： Takashi Akahori ,  Akira Tanihara

发明人： Takashi Akahori ,  Akira Tanihara

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/441

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  Y10S438/909

摘要： A method for forming a thin film, comprising the steps of:generating a plasma in a plasma generation chamber by action of an electric field generated by a microwave and a magnetic field generated by an exciting coil arranged around; andintroducing the generated plasma into a reaction chamber, resulting in forming a thin film on a sample placed on a sample stage, wherein it is a chracteristic to form a metal nitride film on said sample, by introducing Ar, H.sub.2, and N.sub.2 gas into said plasma generation chamber, while introducing a metallic gas into said reaction chamber.By the method according to the present invention, it is possible to form a thin film having good Step Coverage on the contact hole, in addition, on the side wall of the contact hole a thinner film can be formed than that on the bottom. As a result, in the next step, filling in with interconnection materials can be surely performed, resulting in improving reliability of LSI devices.

摘要翻译： 一种形成薄膜的方法，包括以下步骤：通过由微波产生的电场和由周围布置的励磁线圈产生的磁场产生等离子体产生室中的等离子体; 并将产生的等离子体引入反应室，导致在放置在样品台上的样品上形成薄膜，其特征在于在所述样品上形成金属氮化物膜，通过将Ar，H 2和N 2气体引入 所述等离子体产生室同时将金属气体引入所述反应室。 通过根据本发明的方法，可以在接触孔上形成具有良好阶跃覆盖率的薄膜，此外，在接触孔的侧壁上可以形成比底部更薄的薄膜。 结果，在下一步骤中，可以可靠地进行互连材料的填充，从而提高LSI器件的可靠性。