摘要:
A display device is provided with a light detection unit that detects the intensity of ambient light and is capable of automatically controlling the luminosity of an illumination unit and/or the luminosity of the display device on the basis of the intensity of ambient light detected by the light detection unit. Moreover, the display device makes it possible to easily conduct a test on light-sensor characteristics.
摘要:
The invention provides a display unit that has a display area and first and second photodetectors 10a and 10b on a substrate and outputs as a light intensity signal S a light intensity detected by the first and second photodetectors 10a and 10b. The first photodetector 10a includes a first photodetection circuit LS1 outputting a first output signal Sa to an ambient light photosensor reader 20, and the second photodetector 10b includes a light-reducing unit and a second photodetection circuit LS2 outputting a second output signal Sb to an ambient light photosensor reader 20. The ambient light photosensor reader 20 includes a photodegradation factor calculator 21 calculating a photodegradation reparation factor K, a photodegradation rate calculator 22 deriving a photodegradation rate D based on the photodegradation reparation factor K, and a light signal output unit 24 outputting a light intensity signal S based on the photodegradation rate D.
摘要:
A liquid crystal display device of the invention has: a display panel with an active matrix substrate 2 and a second substrate of transparent material deposed opposite that substrate; an illuminating unit that illuminates the display panel; and a photosensing unit that is provided on the active matrix substrate and has an ambient light photosensor that senses external light. The ambient light photosensor is constituted of a thin film transistor. At least the source electrode SL and drain electrode DL of the thin film transistor are covered by a shielding transparent electrode 6, with transparent insulator 3 and 5 interposed. The transparent electrode 6 is electrically connected to the drain electrode DL, and moreover is connected to a power source supplying constant voltage. Thanks to such structure, a display device is provided in which the ambient light photosensor is built into a panel substrate so as not to be affected by external noise and the peripheral circuits.
摘要翻译:本发明的液晶显示装置具有:具有有源矩阵基板2的显示面板和与该基板相反的透明材料的第二基板; 照明单元,其照亮所述显示面板; 以及光敏单元,其设置在有源矩阵基板上并具有感测外部光的环境光传感器。 环境光电传感器由薄膜晶体管构成。 至少薄膜晶体管的源电极S L L和漏电极D L L被屏蔽透明电极6覆盖,透明绝缘体3和5被插入。 透明电极6与漏电极D L1电连接,此外与提供恒定电压的电源连接。 由于具有这样的结构,所以提供了一种显示装置,其中环境光传感器被内置在面板基板中,以免受到外部噪声和外围电路的影响。
摘要:
A liquid crystal display according to an embodiment of the present invention includes a liquid crystal display panel, an illumination unit for the liquid crystal display panel, a plurality of photodetectors, and a control unit Cnt to control the brightness of the illumination unit. The photodetectors are TFT ambient light photosensors LS1 to LS3, for example, which produce outputs that require time to reach a predetermined value, which the time is correlated with the intensity of ambient light. Detection circuits coupled to the photodetectors include circuits (Cmp1 to Cmp3) logically inverted when an output from the TFT ambient light photosensors LS1 to LS3 reaches a predetermined value. The control unit Cnt includes a discrimination implement Maj that determines that the intensity of ambient light has changed when outputs from the majority of the detection circuits are logically inverted. The above-mentioned structure provides a liquid crystal display that does not use plurality of interface circuits nor A/D converters, nor experience frequent malfunctions for automatic control of the brightness of the illumination unit according to the intensity of ambient light.
摘要:
A semiconductor device including a semiconductor substrate and a recessed transistor provided on the semiconductor substrate, wherein the recessed transistor includes a recess formed in a surface of the semiconductor substrate, an insulating film provided on a surface in the recess, a gate electrode at least partly buried in the recess, and a first diffusion layer and a second diffusion layer formed in a surface of the semiconductor substrate with the gate electrode located between the first diffusion layer and the second diffusion layer, and wherein the insulating film includes a thicker film portion between the first diffusion layer and the gate electrode, the thicker film portion being thicker than a portion of the insulating film located between the gate electrode and a channel region of the recessed transistor.
摘要:
In an electro-optical device substrate, first and second pixel switching elements each include a gate electrode formed of a first conductive film, a gate insulation film formed of a first insulation film, a semiconductor layer, a source electrode formed of a second conductive film, and a drain electrode formed of the second conductive film. A first storage capacitor includes a first storage capacitor electrode formed of the second conductive film, a protective film formed of a second insulation film so as to over at least the first storage capacitor electrode, and a pixel electrode formed so as to overlap with the first storage capacitor electrode at least partially with the protective film interposed therebetween.
摘要:
A semiconductor device includes a memory cell array region including a plurality of memory cells, an annular groove surrounding the memory cell array region, a protective insulating film covering the inner wall of the annular groove, and a conductor filling the annular groove.
摘要:
An active matrix substrate including: a substrate; a display section having a pixel circuit formed on the substrate; and a protection circuit connected to an interconnection of the display section. The protection circuit has a diode-connected transistor, an insulating layer provided so as to cover the transistor, and a light-shielding layer provided in a region above the insulating layer so as to face at least a channel region in the transistor and electrically connected to at least any one of a gate electrode and a source electrode of the transistor.
摘要:
A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.
摘要:
The present invention provides a semiconductor device comprising: a dual-gate peripheral transistor having a transistor structure of surface channel nMOSFET and a transistor structure of surface channel pMOSFET; and a cell transistor having an nMOSFET structure with a recess channel structure, a gate electrode of the cell transistor having an N-type polysilicon layer which contains of N-type impurities at an approximately constant concentration.