公开(公告)号：US06549404B1

公开(公告)日：2003-04-15

申请号：US09762939

申请日：2001-02-14

申请人： Takashi Kitahara ,  Naoki Shuto

发明人： Takashi Kitahara ,  Naoki Shuto

IPC分类号： H05K720

CPC分类号： H05K7/1431 ,  H01L23/367 ,  H01L23/427 ,  H01L23/467 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor module apparatus is configured such that the upper surface of a substrate on which are mounted a plurality of heat-generating semiconductor devices is covered with a radiation plate serving as a support frame for supporting the substrate. A plurality of radiation fins are protruding from the radiation plate. A cover plate is fixedly attached to the radiation plate in such a manner as to cover the radiation plate from above so as to define an air channel for cooling air therebetween. A cooling fan unit is fixedly disposed within the air channel.

摘要翻译： 半导体模块装置被配置为使得其上安装有多个发热半导体器件的基板的上表面被用作支撑基板的支撑框架的辐射板覆盖。 多个辐射翅片从辐射板突出。 盖板以从上方覆盖辐射板的方式固定地附接到辐射板，以便限定用于在其间冷却空气的空气通道。 冷却风扇单元固定地设置在空气通道内。

公开(公告)号：US5182540A

公开(公告)日：1993-01-26

申请号：US662628

申请日：1991-02-28

申请人： Naoki Shuto ,  Fumio Ueno ,  Yoshiko Goto ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Motomasa Imai

发明人： Naoki Shuto ,  Fumio Ueno ,  Yoshiko Goto ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Motomasa Imai

IPC分类号： H01C7/00 ,  C04B35/26 ,  H01C7/04 ,  H01C7/12

CPC分类号： C04B35/2666 ,  H01C7/046

摘要： A resistor element includes a hollow cylindrical sintered body and a pair of electrodes formed on the upper and lower surfaces of the sintered body. The sintered body contains ferrite as a main constituent and contains 0.05 to 10% by volume of an insulator phase formed at the crystal grain boundary of the ferrite crystals. An insulating layer is formed to cover the side surface of the sintered body. The sintered body contains an oxide material selected from the group consisting of 0.005 to 2.0% by weight of bismuth oxide calculated in terms of Bi.sub.2 O.sub.3, 0.01 to 3.0% by weight and 0.005 to 2.0% by weight of silicon oxide and aluminum oxide calculated in terms of SiO.sub.2 and Al.sub.2 O.sub.3 respectively, and 0.01 to 3.5% by weight and 0.001 to 1.6% by weight of silicon oxide and calcium oxide calculated in terms of SiO.sub.2 and CaO, respectively.