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公开(公告)号:US20110121459A1
公开(公告)日:2011-05-26
申请号:US13003181
申请日:2009-07-10
申请人: Takashi Onishi , Masao Mizuno , Hirotaka Ito , Kazuyuki Kohama , Kazuhiro Ito , Susumu Tsukimoto , Masanori Murakami
发明人: Takashi Onishi , Masao Mizuno , Hirotaka Ito , Kazuyuki Kohama , Kazuhiro Ito , Susumu Tsukimoto , Masanori Murakami
IPC分类号: H01L23/535
CPC分类号: H01L21/76843 , H01L21/2855 , H01L21/76867 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要: Provided is a semiconductor interconnection wherein a barrier layer different from a TiO2 layer is formed on an interface between an insulating film and a Cu interconnection without increasing electrical resistivity of the Cu interconnection. In the semiconductor interconnection, a Cu interconnection containing Ti is embedded in a trench arranged on an insulating film on the semiconductor substrate, and a TiC layer is formed between the insulating film and the Cu interconnection. The insulating film is preferably composed of SiCO or SiCN. The thickness of the TiC layer is preferably 3-30 nm.
摘要翻译: 提供了一种半导体互连,其中在绝缘膜和Cu互连之间的界面上形成不同于TiO 2层的阻挡层,而不增加Cu互连的电阻率。 在半导体互连中,包含Ti的Cu互连嵌入设置在半导体衬底上的绝缘膜上的沟槽中,并且在绝缘膜和Cu互连之间形成TiC层。 绝缘膜优选由SiCO或SiCN构成。 TiC层的厚度优选为3-30nm。