公开(公告)号：US07361220B2

公开(公告)日：2008-04-22

申请号：US10809033

申请日：2004-03-25

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masashi Yoshimura ,  Yasunori Kai ,  Mamoru Imade ,  Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masashi Yoshimura ,  Yasunori Kai ,  Mamoru Imade ,  Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12

CPC分类号： C30B23/02 ,  C30B29/403 ,  C30B29/406

摘要： The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.

摘要翻译： 本发明提供一种制造氮化镓单晶的方法，其可以抑制氮化镓的分解并提高升华方法中的生产效率。 根据制造方法，将用于氮化镓（GaN）单晶的材料（GaN粉末）放置在坩埚内部，通过加热升华或蒸发，并在衬底表面上冷却以再次返回到固体，使得镓 氮化物单晶生长在衬底表面上。 单晶的生长在压力下进行。 压力优选为5atm以上（5×1.013×10 -5 Pa）。 单晶优选在含有NH 3和N 2 N的混合气体气氛中生长。