公开(公告)号：US20050202656A1

公开(公告)日：2005-09-15

申请号：US11052861

申请日：2005-02-09

申请人： Takayuki Ito ,  Kyoichi Suguro ,  Kanna Tomiie ,  Kazuya Ouchi

发明人： Takayuki Ito ,  Kyoichi Suguro ,  Kanna Tomiie ,  Kazuya Ouchi

IPC分类号： H01L21/8238 ,  H01L21/265 ,  H01L21/324 ,  H01L21/336 ,  H01L21/425 ,  H01L21/4763 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L21/823814 ,  H01L21/26513 ,  H01L21/2686 ,  H01L29/6659

摘要： A manufacturing method of a semiconductor device, the method including implanting impurity ions into a silicon layer and irradiating a pulsed light having a pulse width of 100 milliseconds or less and a rise time of 0.3 milliseconds or more onto the silicon layer thereby activating the impurity ions. The rise time is defined as a time interval of a leading edge between an instant at which the pulsed light starts to rise and an instant at which the pulsed light reaches a peak energy.

摘要翻译： 一种半导体器件的制造方法，所述方法包括将杂质离子注入到硅层中，并将脉冲宽度为100毫秒或更短的脉冲光和0.3毫秒或更长的上升时间照射到硅层上，从而激活杂质离子 。 上升时间被定义为脉冲光开始上升的瞬间与脉冲光达到峰值能量的瞬间之间的前沿的时间间隔。

公开(公告)号：US07157340B2

公开(公告)日：2007-01-02

申请号：US11052861

申请日：2005-02-09

申请人： Takayuki Ito ,  Kyoichi Suguro ,  Kanna Tomiie ,  Kazuya Ouchi

发明人： Takayuki Ito ,  Kyoichi Suguro ,  Kanna Tomiie ,  Kazuya Ouchi

IPC分类号： H01L21/336 ,  H01L21/331 ,  H01L21/332

CPC分类号： H01L21/823814 ,  H01L21/26513 ,  H01L21/2686 ,  H01L29/6659

摘要： A manufacturing method of a semiconductor device, the method including implanting impurity ions into a silicon layer and irradiating a pulsed light having a pulse width of 100 milliseconds or less and a rise time of 0.3 milliseconds or more onto the silicon layer thereby activating the impurity ions. The rise time is defined as a time interval of a leading edge between an instant at which the pulsed light starts to rise and an instant at which the pulsed light reaches a peak energy.

摘要翻译： 一种半导体器件的制造方法，所述方法包括将杂质离子注入到硅层中，并将脉冲宽度为100毫秒或更短的脉冲光和0.3毫秒或更长的上升时间照射到硅层上，从而激活杂质离子 。 上升时间被定义为脉冲光开始上升的瞬间与脉冲光达到峰值能量的瞬间之间的前沿的时间间隔。