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    Method for manufacturing semiconductor device
    1.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08043917B2

    公开(公告)日：2011-10-25

    申请号：US12468265

    申请日：2009-05-19

    申请人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    发明人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76224 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.

    摘要翻译： 一种制造半导体器件的方法包括：形成具有第一表面和第二表面的硅衬底，所述硅衬底不包括氧化膜或厚度不大于100nm的氧化物膜，至少在第二表面上形成第一氧化膜 所述硅衬底通过至少覆盖所述第一表面形成第一膜，通过使所述第一膜图案化​​而在所述第一表面上形成掩模图案，通过使用所述掩模图案作为掩模在所述第一表面上形成器件分离区域，形成 在所述第一表面上形成栅极绝缘膜，经由所述栅极绝缘膜在所述第一表面上形成栅电极，在所述栅电极的每一侧上形成源极和漏极，以及在所述硅衬底上形成布线层，同时保持所述第一 氧化膜在第二表面上。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20120009752A1

    公开(公告)日：2012-01-12

    申请号：US13238336

    申请日：2011-09-21

    申请人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    发明人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    IPC分类号： H01L21/336

    CPC分类号： H01L21/76224 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.

    摘要翻译： 一种制造半导体器件的方法包括：形成具有第一表面和第二表面的硅衬底，所述硅衬底不包括氧化膜或厚度不大于100nm的氧化物膜，至少在第二表面上形成第一氧化膜 所述硅衬底通过至少覆盖所述第一表面形成第一膜，通过使所述第一膜图案化​​而在所述第一表面上形成掩模图案，通过使用所述掩模图案作为掩模在所述第一表面上形成器件分离区域，形成 在所述第一表面上形成栅极绝缘膜，经由所述栅极绝缘膜在所述第一表面上形成栅电极，在所述栅电极的每一侧上形成源极和漏极，以及在所述硅衬底上形成布线层，同时保持所述第一 氧化膜在第二表面上。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20090317956A1

    公开(公告)日：2009-12-24

    申请号：US12468265

    申请日：2009-05-19

    申请人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    发明人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    IPC分类号： H01L21/762 ,  H01L21/336

    CPC分类号： H01L21/76224 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.

    摘要翻译： 一种制造半导体器件的方法包括：形成具有第一表面和第二表面的硅衬底，所述硅衬底不包括氧化膜或厚度不大于100nm的氧化物膜，至少在第二表面上形成第一氧化膜 所述硅衬底通过至少覆盖所述第一表面形成第一膜，通过使所述第一膜图案化​​而在所述第一表面上形成掩模图案，通过使用所述掩模图案作为掩模在所述第一表面上形成器件分离区域，形成 在所述第一表面上形成栅极绝缘膜，经由所述栅极绝缘膜在所述第一表面上形成栅电极，在所述栅电极的每一侧上形成源极和漏极，以及在所述硅衬底上形成布线层，同时保持所述第一 氧化膜在第二表面上。

    Method for manufacturing semiconductor device
    4.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08273630B2

    公开(公告)日：2012-09-25

    申请号：US13238336

    申请日：2011-09-21

    申请人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    发明人： Takayuki Wada ,  Masanori Terahara ,  Junji Oh

    IPC分类号： H01L21/761

    CPC分类号： H01L21/76224 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.

    摘要翻译： 一种制造半导体器件的方法包括：形成具有第一表面和第二表面的硅衬底，所述硅衬底不包括氧化膜或厚度不大于100nm的氧化物膜，至少在第二表面上形成第一氧化膜 所述硅衬底通过至少覆盖所述第一表面形成第一膜，通过使所述第一膜图案化​​而在所述第一表面上形成掩模图案，通过使用所述掩模图案作为掩模在所述第一表面上形成器件分离区域，形成 在所述第一表面上形成栅极绝缘膜，经由所述栅极绝缘膜在所述第一表面上形成栅电极，在所述栅电极的每一侧上形成源极和漏极，以及在所述硅衬底上形成布线层，同时保持所述第一 氧化膜在第二表面上。

    DETECTION DEVICE, DETECTION METHOD, VEIN SENSING DEVICE, SCANNING PROBE MICROSCOPE, DISTORTION DETECTION DEVICE AND METAL DETECTION DEVICE
    8.
    发明申请
    DETECTION DEVICE, DETECTION METHOD, VEIN SENSING DEVICE, SCANNING PROBE MICROSCOPE, DISTORTION DETECTION DEVICE AND METAL DETECTION DEVICE 审中-公开
    检测装置，检测方法，感测装置，扫描探针显微镜，失真检测装置和金属检测装置

    公开(公告)号：US20110208032A1

    公开(公告)日：2011-08-25

    申请号：US13061646

    申请日：2008-09-02

    申请人： Kiyoaki Takiguchi ,  Takayuki Wada ,  Hidenori Koyano

    发明人： Kiyoaki Takiguchi ,  Takayuki Wada ,  Hidenori Koyano

    IPC分类号： A61B5/05 ,  G01Q90/00 ,  G01R27/26

    CPC分类号： A61B5/05 ,  A61B5/489 ,  A61B2562/0233 ,  A61B2562/046 ,  G01R29/12

    摘要： Provided are a detection device and a detection method that are based on a novel principle and able to detect blood vessels and other various targets with high sensitivity and accuracy. A detection device includes: m electrodes that generate at least around one straight line m rotationally symmetric electric charges (m is an even number that is greater than or equal to 4) whose total amount of charge is substantially 0; and at least one electric field detection element that detects an electric field on the straight line. The m electric charges are a quadrupole, a planar hexapole, a planar octupole, a three-dimensional octupole and the like. In order to make the quadrupole, four electrodes (11 to 14) are disposed at the vertexes of a square. At the center of these electrodes (11 to 14), a detection electrode (20) is disposed. The detection device is used in making up a vein sensing device and the like.

    摘要翻译： 提供了基于新颖原理并且能够以高灵敏度和准确度检测血管和其他各种目标的检测装置和检测方法。 检测装置包括：m个电极，其总电荷大致为0，至少产生大约一条直线m个旋转对称电荷（m为大于或等于4的偶数）; 以及至少一个电场检测元件，其检测直线上的电场。 m电荷是四极，平面六极，平面八极，三维八极等。 为了制造四极杆，四个电极（11〜14）设置在正方形的顶点。 在这些电极（11〜14）的中央设有检测电极（20）。 检测装置用于构成静脉感测装置等。