公开(公告)号：US5087307A

公开(公告)日：1992-02-11

申请号：US620450

申请日：1990-12-03

申请人： Takehiko Nomura ,  Yoshinori Natsume ,  Yoshinori Hosoki

发明人： Takehiko Nomura ,  Yoshinori Natsume ,  Yoshinori Hosoki

IPC分类号： B24B9/06 ,  H01L21/02 ,  H01L21/18 ,  H01L21/20 ,  H01L21/208 ,  H01L21/304 ,  H01L29/06

CPC分类号： H01L21/02008 ,  B24B9/065 ,  H01L21/187 ,  H01L29/0657 ,  Y10T156/1064

摘要： A method of manufacturing a semiconductor substrate comprises a first step of preparing one hundred silicon bodies each having two silicon wafers held together by cohesion after polishing and heating processes. The method further comprises a second step of stacking the silicon bodies in their thickness direction to form a stacked body, and a third step of cylindrically grinding the side surface of the stacked body by a predetermined amount.

摘要翻译： 制造半导体衬底的方法包括：第一步骤，通过在抛光和加热工艺之后通过内聚制备每个具有两个硅晶片的硅体。 该方法还包括在其厚度方向堆叠硅体以形成层叠体的第二步骤，以及将堆叠体的侧表面圆柱形研磨预定量的第三步骤。

公开(公告)号：US4985745A

公开(公告)日：1991-01-15

申请号：US293026

申请日：1989-01-03

申请人： Koichi Kitahara ,  Yoshinori Natsume ,  Yoshinori Hosoki

发明人： Koichi Kitahara ,  Yoshinori Natsume ,  Yoshinori Hosoki

IPC分类号： H01L27/06 ,  H01L21/762 ,  H01L21/8249

CPC分类号： H01L21/762 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76286

摘要： The main surface of a first semiconductor substrate is bonded to the main surface of a second semiconductor substrate with an insulation film interposed therebetween to form a composite substrate. The first semiconductor substrate and insulation film are selectively etched to form an etched portion which reaches at least the second semiconductor substrate. An impurity layer with an impurity concentration different from that of the first semiconductor substrate is formed on or in the surface area exposed to the etched portion of the first and second semiconductor substrates. An epitaxial layer having an impurity concentration different from that of the impurity layer is formed in the etched portion. The first semiconductor substrate, impurity layer and epitaxial layer are planarized. The first semiconductor substrate, impurity layer and epitaxial layer are etched to make a pattern of the impurity layer on the surface of the composite substrate and the composite semiconductor substrate is aligned for formation of elements based on the pattern. The elements are formed in the composite substrate thus aligned.