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公开(公告)号：US20120104446A1
公开(公告)日：2012-05-03
申请号：US13343810
申请日：2012-01-05
申请人： Yasuhiko Akaike , Ryo Saeki , Yoshinori Natsume
发明人： Yasuhiko Akaike , Ryo Saeki , Yoshinori Natsume
IPC分类号： H01L33/60
CPC分类号： H01L33/0079
摘要： A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step.
摘要翻译： 一种发光器件的制造方法，包括：形成第一多层体，所述第一多层体包括第一衬底，设置在所述第一衬底上并具有发光层的第一半导体层和设置在所述第一半导体层上的第一金属层; 形成具有不同于所述第一基板的热膨胀系数的热膨胀系数的第二基板和设置在所述第二基板上的第二金属层的第二多层体; 第一接合步骤，被配置为加热彼此接触的第一金属层和第二金属层; 在第一接合步骤之后去除第一衬底; 以及第二接合工序，被配置为在除了第一接合步骤的温度以上的温度下进行加热。
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公开(公告)号：US08110451B2
公开(公告)日：2012-02-07
申请号：US12544353
申请日：2009-08-20
申请人： Yasuhiko Akaike , Ryo Saeki , Yoshinori Natsume
发明人： Yasuhiko Akaike , Ryo Saeki , Yoshinori Natsume
IPC分类号： H01L21/335
CPC分类号： H01L33/0079
摘要： A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step.
摘要翻译： 一种发光器件的制造方法，包括：形成第一多层体，所述第一多层体包括第一衬底，设置在所述第一衬底上并具有发光层的第一半导体层和设置在所述第一半导体层上的第一金属层; 形成具有不同于所述第一基板的热膨胀系数的热膨胀系数的第二基板和设置在所述第二基板上的第二金属层的第二多层体; 第一接合步骤，被配置为加热彼此接触的第一金属层和第二金属层; 在第一接合步骤之后去除第一衬底; 以及第二接合工序，被配置为在除了第一接合步骤的温度以上的温度下进行加热。
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公开(公告)号：US09147798B2
公开(公告)日：2015-09-29
申请号：US13421402
申请日：2012-03-15
CPC分类号： H01L33/0079 , H01L33/005 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface. The semiconductor stacked body is provided on a side of the first surface of the reflection layer. The first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view. The second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.
摘要翻译： 根据一个实施例，半导体发光元件包括发光元件，其包括包括发光层，反射层，支撑衬底，第一接合电极和第二接合电极的半导体层叠体。 反射层由金属制成，具有与第一表面相对的第一表面和第二表面。 半导体层叠体设置在反射层的第一表面的一侧。 第一接合电极设置在第二表面和支撑基板之间，并且包括朝向支撑基板突出的凸部和在俯视图中设置在凸部周围的底部。 第二接合电极包括嵌合在第一接合电极的凸部中并能够接合支撑基板和第一接合电极的凹部。
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公开(公告)号：US20100203659A1
公开(公告)日：2010-08-12
申请号：US12544353
申请日：2009-08-20
申请人： Yasuhiko AKAIKE , Ryo SAEKI , Yoshinori NATSUME
发明人： Yasuhiko AKAIKE , Ryo SAEKI , Yoshinori NATSUME
IPC分类号： H01L21/00
CPC分类号： H01L33/0079
摘要： A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step.
摘要翻译： 一种发光器件的制造方法，包括：形成第一多层体，所述第一多层体包括第一衬底，设置在所述第一衬底上并具有发光层的第一半导体层和设置在所述第一半导体层上的第一金属层; 形成具有不同于所述第一基板的热膨胀系数的热膨胀系数的第二基板和设置在所述第二基板上的第二金属层的第二多层体; 第一接合步骤，被配置为加热彼此接触的第一金属层和第二金属层; 在第一接合步骤之后去除第一衬底; 以及第二接合工序，被配置为在除了第一接合步骤的温度以上的温度下进行加热。
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公开(公告)号：US5087307A
公开(公告)日：1992-02-11
申请号：US620450
申请日：1990-12-03
IPC分类号： B24B9/06 , H01L21/02 , H01L21/18 , H01L21/20 , H01L21/208 , H01L21/304 , H01L29/06
CPC分类号： H01L21/02008 , B24B9/065 , H01L21/187 , H01L29/0657 , Y10T156/1064
摘要： A method of manufacturing a semiconductor substrate comprises a first step of preparing one hundred silicon bodies each having two silicon wafers held together by cohesion after polishing and heating processes. The method further comprises a second step of stacking the silicon bodies in their thickness direction to form a stacked body, and a third step of cylindrically grinding the side surface of the stacked body by a predetermined amount.
摘要翻译： 制造半导体衬底的方法包括：第一步骤，通过在抛光和加热工艺之后通过内聚制备每个具有两个硅晶片的硅体。 该方法还包括在其厚度方向堆叠硅体以形成层叠体的第二步骤，以及将堆叠体的侧表面圆柱形研磨预定量的第三步骤。
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公开(公告)号：US20120070958A1
公开(公告)日：2012-03-22
申请号：US13238715
申请日：2011-09-21
申请人： Kazuyoshi Furukawa , Yoshinori Natsume , Yasuhiko Akaike , Shinji Nunotani , Wakana Nishiwaki , Masaaki Ogawa , Toru Kita , Hidefumi Yasuda
发明人： Kazuyoshi Furukawa , Yoshinori Natsume , Yasuhiko Akaike , Shinji Nunotani , Wakana Nishiwaki , Masaaki Ogawa , Toru Kita , Hidefumi Yasuda
IPC分类号： H01L21/762
CPC分类号： H01L21/185 , H01L21/76251 , H01L33/0079
摘要： In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.
摘要翻译： 在本实施方式的半导体装置的制造方法中，在室温下，具有比第一基板的热膨胀系数小的第一基板与第二基板粘合。 然后，第一基板和第二基板被加热，第一基板在比第二基板的温度高的温度下加热。 因此，第一基板和第二基板结合在一起。 第一衬底是包括氮化物基半导体层的蓝宝石衬底或包括磷基半导体层的GaAs衬底。 第二基板是硅衬底，GaAs衬底，Ge衬底或金属衬底。
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公开(公告)号：US20110042680A1
公开(公告)日：2011-02-24
申请号：US12726462
申请日：2010-03-18
CPC分类号： H01L33/145 , H01L33/0079 , H01L33/38
摘要： A light emitting device includes: a conductive substrate; a metal film provided above the conductive substrate; a light emitting layer provided above the metal film; an electrode provided partly above the light emitting layer; and a current suppression layer being in contact with the metal film, provided in a region including at least part of an immediately underlying region of the electrode, and configured to suppress current, a first portion of the metal film including at least part of a portion located between the current suppression layer and the electrode, being separated from an portion other than the first portion.
摘要翻译： 发光器件包括：导电衬底; 设置在导电性基板上的金属膜; 设置在金属膜上方的发光层; 设置在发光层的上方的电极; 以及电流抑制层，其与所述金属膜接触，设置在包括所述电极的紧下游区域的至少一部分的区域中，并且被构造成抑制电流，所述金属膜的第一部分包括至少部分部分 位于电流抑制层和电极之间，与第一部分以外的部分分离。
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公开(公告)号：US20060043386A1
公开(公告)日：2006-03-02
申请号：US11208638
申请日：2005-08-23
IPC分类号： H01L33/00
CPC分类号： H01L33/20
摘要： A semiconductor light-emitting device including a light-emitting portion permitting light at a specific wavelength and having two surfaces opposite each other. The device also includes a first type of semiconductor substrate and a second type semiconductor substrate which are integrally joined to corresponding surfaces of the light-emitting portion and are substantially transparent to the wavelength. The semiconductor substrates have a joined surface on the surfaces of the light-emitting portion and outer side surfaces which have the width large on a side near the light-emitting portion and become narrow on a side away from the light-emitting portion and further surfaces opposite the joined surfaces. The device also includes first and second electrodes which are disposed on the corresponding further surfaces, a semiconductor layer in a region of at least one of the semiconductor substrates, and an impurity that causes current flow in concentrated manner through the middle of the light-emitting portion.
摘要翻译： 一种半导体发光器件，包括允许特定波长的光并具有彼此相对的两个表面的发光部分。 该器件还包括第一类型的半导体衬底和第二类型半导体衬底，其一体地连接到发光部分的对应表面并且对于波长基本上是透明的。 半导体基板在发光部分和外侧表面上具有在发光部分附近的宽度较大的表面上的接合表面，并且在远离发光部分的一侧变窄，并且还有表面 与接合表面相对。 该器件还包括设置在相应的另外的表面上的第一和第二电极，半导体衬底中的至少一个的区域中的半导体层以及通过集中的方式使电流流过发光的中间的杂质 一部分。
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公开(公告)号：US07476902B2
公开(公告)日：2009-01-13
申请号：US11695299
申请日：2007-04-02
IPC分类号： H01L27/15
CPC分类号： H01L33/20
摘要： A semiconductor light-emitting device including a light-emitting layer forming portion, a semiconductor substrate of a first conductivity type, a first electrode which is disposed on a surface of the semiconductor substrate of the first conductivity type, a semiconductor substrate of a second conductivity type, and a second electrode which is disposed a surface of the semiconductor substrate of the second conductivity type, at least one of the semiconductor substrate of the first conductivity type and the semiconductor substrate of the second conductivity type having an interstice located near an outer side surface on a side close to the light-emitting layer forming portion and around a joined surface on a principal surface of the light-emitting layer forming portion.
摘要翻译： 一种半导体发光器件，包括发光层形成部分，第一导电类型的半导体衬底，设置在第一导电类型的半导体衬底的表面上的第一电极，具有第二导电类型的半导体衬底 以及设置在第二导电类型的半导体衬底的表面上的第二电极，第一导电类型的半导体衬底和第二导电类型的半导体衬底中的至少一个具有位于外侧附近的间隙 在靠近发光层形成部分的一侧的表面和发光层形成部分的主表面上的接合表面附近。
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公开(公告)号：US07220996B2
公开(公告)日：2007-05-22
申请号：US11208638
申请日：2005-08-23
CPC分类号： H01L33/20
摘要： A semiconductor light-emitting device including a light-emitting portion permitting light at a specific wavelength and having two surfaces opposite each other. The device also includes a first type of semiconductor substrate and a second type semiconductor substrate which are integrally joined to corresponding surfaces of the light-emitting portion and are substantially transparent to the wavelength. The semiconductor substrates have a joined surface on the surfaces of the light-emitting portion and outer side surfaces which have the width large on a side near the light-emitting portion and become narrow on a side away from the light-emitting portion and further surfaces opposite the joined surfaces. The device also includes first and second electrodes which are disposed on the corresponding further surfaces, a semiconductor layer in a region of at least one of the semiconductor substrates, and an impurity that causes current flow in concentrated manner through the middle of the light-emitting portion.
摘要翻译： 一种半导体发光器件，包括允许特定波长的光并具有彼此相对的两个表面的发光部分。 该器件还包括第一类型的半导体衬底和第二类型半导体衬底，其一体地连接到发光部分的对应表面并且对于波长基本上是透明的。 半导体基板在发光部分和外侧表面上具有在发光部分附近的宽度较大的表面上的接合表面，并且在远离发光部分的一侧变窄，并且进一步的表面 与接合表面相对。 该器件还包括设置在相应的另外的表面上的第一和第二电极，半导体衬底中的至少一个的区域中的半导体层以及通过集中的方式使电流流过发光的中间的杂质 一部分。
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