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公开(公告)号：US20090004607A1
公开(公告)日：2009-01-01
申请号：US11658448
申请日：2005-07-29
IPC分类号： G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341 , G03F7/70916
摘要： A resist film is formed on a surface of a wafer. Then, a liquid layer used for irradiating the resist film with exposure light rays is formed from a liquid between an optical component facing the resist film and the surface of the wafer. The liquid is capable of transmitting the exposure light rays and has a function of cleaning a surface of the wafer and a surface of the optical component. Then, the resist film is irradiated with the exposure light rays projected from the optical component and transmitted through the liquid layer, to perform light exposure with a predetermined pattern on the resist film. Then, development is performed on the wafer after the light exposure, to form a predetermined pattern on the wafer.
摘要翻译： 在晶片的表面上形成抗蚀剂膜。 然后，从面向抗蚀剂膜的光学部件和晶片的表面之间的液体形成用于用曝光光线照射抗蚀剂膜的液体层。 液体能够透射曝光光线，并且具有清洁晶片的表面和光学部件的表面的功能。 然后，用从光学部件突出的透射光束照射抗蚀剂膜，透过液体层，在抗蚀剂膜上进行规定图案的曝光。 然后，在曝光后在晶片上进行显影，以在晶片上形成预定图案。
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2.发明申请公开(公告)号：US20070072092A1
公开(公告)日：2007-03-29
申请号：US11515800
申请日：2006-09-06
申请人： Takeshi Shimoaoki , Junichi Kitano
发明人： Takeshi Shimoaoki , Junichi Kitano
CPC分类号： H01L21/67051 , G03F7/425 , H01L21/6715
摘要： In the present invention, in a rinse treatment method of cleaning a substrate after an exposed pattern thereon has been subjected to developing treatment, the following steps are performed such as supplying pure water onto the substrate to clean the substrate with the pure water; supplying a first rinse solution composed of a surfactant with a predetermined concentration onto the substrate to clean the substrate with the first rinse solution; and supplying a second rinse solution composed of a surfactant with a concentration lower than that of the first rinse solution onto the substrate to clean the substrate with the second rinse solution. According to the present invention, in the rinse treatment of the substrate after developing treatment, it is possible to dry the substrate without causing pattern collapse to restrain variation in pattern line width, and to reduce the remaining precipitation-based defects to increase the productivity.
摘要翻译： 在本发明中，在对曝光图案进行显影处理后的基板的清洗处理方法中，进行如下步骤，例如向基板供给纯水，用纯水清洗基板; 将由预定浓度的表面活性剂组成的第一冲洗溶液供应到所述基材上以用所述第一冲洗溶液清洗所述基材; 以及将由表面活性剂组成的浓度低于第一冲洗溶液的表面活性剂的第二冲洗溶液供应到基材上，以用第二冲洗溶液清洗基材。 根据本发明，在显影处理后的基板的漂洗处理中，可以在不引起图案塌陷的情况下干燥基板，抑制图案线宽度的变化，并且减少剩余的基于沉淀的缺陷以提高生产率。
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公开(公告)号：US20090042149A1
公开(公告)日：2009-02-12
申请号：US12219838
申请日：2008-07-29
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , H01L21/67051
摘要： A rinsing process is performed by supplying a rinsing-liquid onto a substrate with a light-exposed pattern formed thereon and treated by a developing process. The rinsing liquid contains a polyethylene glycol family surfactant or an acetylene glycol family surfactant in a critical micelle concentration or less. Preferably, the surfactant includes a hydrophobic group having a carbon number of larger than 11 and having no double bond or triple bond therein.
摘要翻译： 通过将洗涤液供给到其上形成有曝光图案的基板上并通过显影处理进行冲洗处理。 冲洗液含有聚乙二醇家族表面活性剂或乙炔二醇家族表面活性剂，其临界胶束浓度或更低。 优选地，表面活性剂包括碳数大于11的疏水基团，其中没有双键或三键。
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4.发明授权公开(公告)号：US07977039B2
公开(公告)日：2011-07-12
申请号：US11515800
申请日：2006-09-06
申请人： Takeshi Shimoaoki , Junichi Kitano
发明人： Takeshi Shimoaoki , Junichi Kitano
IPC分类号： G03F7/30
CPC分类号： H01L21/67051 , G03F7/425 , H01L21/6715
摘要： In the present invention, in a rinse treatment method of cleaning a substrate after an exposed pattern thereon has been subjected to developing treatment, the following steps are performed such as supplying pure water onto the substrate to clean the substrate with the pure water; supplying a first rinse solution composed of a surfactant with a predetermined concentration onto the substrate to clean the substrate with the first rinse solution; and supplying a second rinse solution composed of a surfactant with a concentration lower than that of the first rinse solution onto the substrate to clean the substrate with the second rinse solution. According to the present invention, in the rinse treatment of the substrate after developing treatment, it is possible to dry the substrate without causing pattern collapse to restrain variation in pattern line width, and to reduce the remaining precipitation-based defects to increase the productivity.
摘要翻译： 在本发明中，在对曝光图案进行显影处理后的基板的清洗处理方法中，进行如下步骤，例如向基板供给纯水，用纯水清洗基板; 将由预定浓度的表面活性剂组成的第一冲洗溶液供应到所述基材上以用所述第一冲洗溶液清洗所述基材; 以及将由表面活性剂组成的浓度低于第一冲洗溶液的表面活性剂的第二冲洗溶液供应到基材上，以用第二冲洗溶液清洗基材。 根据本发明，在显影处理后的基板的漂洗处理中，可以在不引起图案塌陷的情况下干燥基板，抑制图案线宽度的变化，并且减少剩余的基于沉淀的缺陷以提高生产率。
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公开(公告)号：US20070134601A1
公开(公告)日：2007-06-14
申请号：US11652497
申请日：2007-01-12
IPC分类号： G03C5/00
CPC分类号： G03F7/40 , H01L21/67051
摘要： A rinsing process is performed by supplying a rinsing liquid onto a substrate with a light-exposed pattern formed thereon and treated by a developing process. The rinsing liquid contains a polyethylene glycol family surfactant or an acetylene glycol family surfactant in a critical micelle concentration or less. Preferably, the surfactant includes a hydrophobic group having a carbon number of larger than 11 and having no double bond or triple bond therein.
摘要翻译： 通过在其上形成有曝光图案的基板上提供冲洗液体并通过显影处理来进行冲洗处理。 冲洗液含有聚乙二醇家族表面活性剂或乙炔二醇家族表面活性剂，其临界胶束浓度或更低。 优选地，表面活性剂包括碳数大于11的疏水基团，其中没有双键或三键。
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公开(公告)号：US07419773B2
公开(公告)日：2008-09-02
申请号：US11652497
申请日：2007-01-12
IPC分类号： C03F7/26
CPC分类号： G03F7/40 , H01L21/67051
摘要： A rinsing process is performed by supplying a rinsing liquid onto a substrate with a light-exposed pattern formed thereon and treated by a developing process. The rinsing liquid contains a polyethylene glycol family surfactant or an acetylene glycol family surfactant in a critical micelle concentration or less. Preferably, the surfactant includes a hydrophobic group having a carbon number of larger than 11 and having no double bond or triple bond therein.
摘要翻译： 通过在其上形成有曝光图案的基板上提供冲洗液体并通过显影处理来进行冲洗处理。 冲洗液含有聚乙二醇家族表面活性剂或乙炔二醇家族表面活性剂，其临界胶束浓度或更低。 优选地，表面活性剂包括碳数大于11的疏水基团，其中没有双键或三键。
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