公开(公告)号：US06831448B2

公开(公告)日：2004-12-14

申请号：US10427487

申请日：2003-05-01

申请人： Takuya Ishii ,  Hiroshi Saito ,  Hironori Kamiya ,  Takashi Ryu

发明人： Takuya Ishii ,  Hiroshi Saito ,  Hironori Kamiya ,  Takashi Ryu

IPC分类号： G05F140

CPC分类号： H02M3/158 ,  H02M3/1582

摘要： In order to increase the transient response speed of a DC-to-DC converter capable of voltage step-up and voltage step-down, to which a DC voltage is input from a battery or the like and from which a controlled DC voltage is supplied to a load, a first voltage E1 lower than an output setting voltage Eset by a predetermined voltage is defined and is compared with a DC output voltage Eo by a first comparator, and the result of the comparison is output. @a A second voltage E2 lower than a DC input voltage Ei by a predetermined voltage is defined and is compared with the DC output voltage Eo by a second comparator 133, and the result of the comparison is also output. When the results of the comparisons are represented by Eo

摘要翻译： 为了增加能够进行升压和降压的DC-DC转换器的瞬态响应速度，从电池等输入直流电压并从其提供受控直流电压 定义一个低于输出设定电压Eset的预定电压的第一电压E1并通过第一比较器与直流输出电压Eo进行比较，并输出比较结果。 定义了低于直流输入电压Ei的预定电压的第二电压E2，并且通过第二比较器133与直流输出电压Eo进行比较，并且还输出比较结果。 当比较结果由Eo

公开(公告)号：US5142348A

公开(公告)日：1992-08-25

申请号：US566520

申请日：1990-08-13

申请人： Manabu Imahashi ,  Hironori Kamiya

发明人： Manabu Imahashi ,  Hironori Kamiya

IPC分类号： H01L29/74

CPC分类号： H01L29/7436

摘要： A lateral thyristor is provided which includes a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on the semiconductor substrate, an anode diffusion layer of the first conductivity type formed in the epitaxial layer, a gate diffusion layer of the first conductivity type formed in the epitaxial layer, and a buried layer of the second conductivity type formed below the anode diffusion layer and extending between the semiconductor substrate and the epitaxial layer, wherein there is a region directly below the anode diffusion layer where the anode diffusion layer and the buried layer do not overlap each other, when the lateral thyristor is looked down upon in a direction perpendicular to the principal surface of the semiconductor substrate.

摘要翻译： 提供一种横向晶闸管，其包括第一导电类型的半导体衬底，形成在半导体衬底上的第二导电类型的外延层，形成在外延层中的第一导电类型的阳极扩散层，栅极扩散层 在外延层中形成的第一导电类型和形成在阳极扩散层下方并在半导体衬底和外延层之间延伸的第二导电类型的掩埋层，其中在阳极扩散层的正下方存在阳极，阳极扩散层的阳极 当横向晶闸管在垂直于半导体衬底的主表面的方向上向下俯视时，扩散层和掩埋层彼此不重叠。