公开(公告)号：US20130193527A1

公开(公告)日：2013-08-01

申请号：US13429029

申请日：2012-03-23

Applicant: Chia-Hua CHU ,  Kuei-Sung CHANG ,  Te-Hao LEE

Inventor： Chia-Hua CHU ,  Kuei-Sung CHANG ,  Te-Hao LEE

IPC: H01L27/02 ,  B82Y99/00

CPC classification number: B81B7/007 ,  B81B2207/07 ,  B81B2207/095 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/036 ,  B82Y30/00 ,  H01L21/76898

Abstract: The present disclosure includes micro-electro mechanical system (MEMS) structures and methods of forming the same. Substrates of the MEMS structures are bonded together by fusion bonding at high processing temperatures, which enables more complete removal of chemical species from the dielectric materials in the substrates prior to sealing cavities of the MEMS structures. Fusion bonding of MEMS structures reduces outgassing of chemical species and is compatible with the cavity formation process. The MEMS structures bonded by fusion bonding are mechanically stronger compared to eutectic bonding due to a higher bonding ratio. In addition, fusion bonding enables the formation of through substrate vias (TSVs) in the MEMS structures.

Abstract translation: 本公开内容包括微机电系统（MEMS）结构及其形成方法。 MEMS结构的衬底通过在高加工温度下的熔融粘合而结合在一起，这使得在MEMS结构的密封腔之前能够更好地从基板中的电介质材料中去除化学物质。 MEMS结构的熔合结合减少了化学物质的脱气，并且与腔形成过程相容。 通过熔接结合的MEMS结构由于较高的接合率而与共晶接合机械地更强。 此外，熔接可以在MEMS结构中形成贯穿衬底通孔（TSV）。

公开(公告)号：US20130230939A1

公开(公告)日：2013-09-05

申请号：US13412257

申请日：2012-03-05

Applicant: Te-Hao LEE

Inventor： Te-Hao LEE

IPC: H01L21/02

CPC classification number: B81C1/00619 ,  B81C2201/0122 ,  B81C2201/0178

Abstract: An HF vapor etch etches high aspect ratio openings to form MEMS devices and other tightly-packed semiconductor devices with 0.2 μm air gaps between structures. The HF vapor etch etches oxide plugs and gaps with void portions and oxide liner portions and further etches oxide layers that are buried beneath silicon and other structures and is ideally suited to release cantilevers and other MEMS devices. The HF vapor etches at room temperature and atmospheric pressure in one embodiment. A process sequence is provided that forms MEMS devices including cantilevers and lateral, in-plane electrodes that are stationary and vibration resistant.

Abstract translation: HF蒸汽蚀刻蚀刻高纵横比开口以形成MEMS器件和其他紧密堆积的半导体器件，其中在结构之间具有0.2μm的气隙。 HF蒸汽蚀刻蚀刻具有空隙部分和氧化物衬垫部分的氧化物塞和间隙，并进一步蚀刻氧化物层，其被埋在硅和其它结构之下，并且理想地适合于释放悬臂和其它MEMS器件。 在一个实施方案中，HF蒸气在室温和大气压下蚀刻。 提供了一种形成MEMS器件的工艺顺序，其包括静止和抗振动的悬臂和侧向平面内的电极。