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    Methods for forming MEMS devices
    1.
    发明授权
    Methods for forming MEMS devices 有权
    MEMS器件的形成方法

    公开(公告)号：US08623768B2

    公开(公告)日：2014-01-07

    申请号：US13310422

    申请日：2011-12-02

    Applicant: Te-Hao Lee ,  Yuan-Chih Hsieh

    Inventor： Te-Hao Lee ,  Yuan-Chih Hsieh

    IPC: H01L21/311

    CPC classification number: B81B3/0021 ,  B81B2201/0235 ,  B81B2207/098 ,  B81C1/00301 ,  G01P15/0802 ,  G01P15/125 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

    Abstract: A method includes forming a Micro-Electro-Mechanical System (MEMS) device on a front surface of a substrate. After the step of forming the MEMS device, a through-opening is formed in the substrate, wherein the through-opening is formed from a backside of the substrate. The through-opening is filled with a dielectric material, which insulates a first portion of the substrate from a second portion of the substrate. An electrical connection is formed on the backside of the substrate. The electrical connection is electrically coupled to the MEMS device through the first portion of the substrate.

    Abstract translation: 一种方法包括在基板的前表面上形成微电子机械系统（MEMS）装置。 在形成MEMS器件的步骤之后，在衬底中形成通孔，其中通孔由衬底的背面形成。 通孔填充有电介质材料，其将衬底的第一部分与衬底的第二部分绝缘。 在基板的背面形成电连接。 电连接通过衬底的第一部分电耦合到MEMS器件。

    MICRO-ELECTRO MECHANICAL SYSTEM (MEMS) STRUCTURES WITH THROUGH SUBSTRATE VIAS AND METHODS OF FORMING THE SAME
    2.
    发明申请
    MICRO-ELECTRO MECHANICAL SYSTEM (MEMS) STRUCTURES WITH THROUGH SUBSTRATE VIAS AND METHODS OF FORMING THE SAME 有权
    微电子机械系统（MEMS）通过基板VIAS的结构及其形成方法

    公开(公告)号：US20130193527A1

    公开(公告)日：2013-08-01

    申请号：US13429029

    申请日：2012-03-23

    Applicant: Chia-Hua CHU ,  Kuei-Sung CHANG ,  Te-Hao LEE

    Inventor： Chia-Hua CHU ,  Kuei-Sung CHANG ,  Te-Hao LEE

    IPC: H01L27/02 ,  B82Y99/00

    CPC classification number: B81B7/007 ,  B81B2207/07 ,  B81B2207/095 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/036 ,  B82Y30/00 ,  H01L21/76898

    Abstract: The present disclosure includes micro-electro mechanical system (MEMS) structures and methods of forming the same. Substrates of the MEMS structures are bonded together by fusion bonding at high processing temperatures, which enables more complete removal of chemical species from the dielectric materials in the substrates prior to sealing cavities of the MEMS structures. Fusion bonding of MEMS structures reduces outgassing of chemical species and is compatible with the cavity formation process. The MEMS structures bonded by fusion bonding are mechanically stronger compared to eutectic bonding due to a higher bonding ratio. In addition, fusion bonding enables the formation of through substrate vias (TSVs) in the MEMS structures.

    Abstract translation: 本公开内容包括微机电系统（MEMS）结构及其形成方法。 MEMS结构的衬底通过在高加工温度下的熔融粘合而结合在一起，这使得在MEMS结构的密封腔之前能够更好地从基板中的电介质材料中去除化学物质。 MEMS结构的熔合结合减少了化学物质的脱气，并且与腔形成过程相容。 通过熔接结合的MEMS结构由于较高的接合率而与共晶接合机械地更强。 此外，熔接可以在MEMS结构中形成贯穿衬底通孔（TSV）。

    HIGH ASPECT RATIO MEMS DEVICES AND METHODS FOR FORMING THE SAME
    4.
    发明申请
    HIGH ASPECT RATIO MEMS DEVICES AND METHODS FOR FORMING THE SAME 有权
    高比例MEMS器件及其形成方法

    公开(公告)号：US20130230939A1

    公开(公告)日：2013-09-05

    申请号：US13412257

    申请日：2012-03-05

    Applicant: Te-Hao LEE

    Inventor： Te-Hao LEE

    IPC: H01L21/02

    CPC classification number: B81C1/00619 ,  B81C2201/0122 ,  B81C2201/0178

    Abstract: An HF vapor etch etches high aspect ratio openings to form MEMS devices and other tightly-packed semiconductor devices with 0.2 μm air gaps between structures. The HF vapor etch etches oxide plugs and gaps with void portions and oxide liner portions and further etches oxide layers that are buried beneath silicon and other structures and is ideally suited to release cantilevers and other MEMS devices. The HF vapor etches at room temperature and atmospheric pressure in one embodiment. A process sequence is provided that forms MEMS devices including cantilevers and lateral, in-plane electrodes that are stationary and vibration resistant.

    Abstract translation: HF蒸汽蚀刻蚀刻高纵横比开口以形成MEMS器件和其他紧密堆积的半导体器件，其中在结构之间具有0.2μm的气隙。 HF蒸汽蚀刻蚀刻具有空隙部分和氧化物衬垫部分的氧化物塞和间隙，并进一步蚀刻氧化物层，其被埋在硅和其它结构之下，并且理想地适合于释放悬臂和其它MEMS器件。 在一个实施方案中，HF蒸气在室温和大气压下蚀刻。 提供了一种形成MEMS器件的工艺顺序，其包括静止和抗振动的悬臂和侧向平面内的电极。

    Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same
    6.
    发明授权
    Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same 有权
    具有通孔的微电子机械系统（MEMS）结构通孔及其形成方法

    公开(公告)号：US09466532B2

    公开(公告)日：2016-10-11

    申请号：US13429029

    申请日：2012-03-23

    Applicant: Chia-Hua Chu ,  Kuei-Sung Chang ,  Te-Hao Lee

    Inventor： Chia-Hua Chu ,  Kuei-Sung Chang ,  Te-Hao Lee

    IPC: H01L21/768 ,  B81C1/00 ,  B82Y30/00

    CPC classification number: B81B7/007 ,  B81B2207/07 ,  B81B2207/095 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/036 ,  B82Y30/00 ,  H01L21/76898

    Abstract: The present disclosure includes micro-electro mechanical system (MEMS) structures and methods of forming the same. Substrates of the MEMS structures are bonded together by fusion bonding at high processing temperatures, which enables more complete removal of chemical species from the dielectric materials in the substrates prior to sealing cavities of the MEMS structures. Fusion bonding of MEMS structures reduces outgassing of chemical species and is compatible with the cavity formation process. The MEMS structures bonded by fusion bonding are mechanically stronger compared to eutectic bonding due to a higher bonding ratio. In addition, fusion bonding enables the formation of through substrate vias (TSVs) in the MEMS structures.

    Abstract translation: 本公开内容包括微机电系统（MEMS）结构及其形成方法。 MEMS结构的衬底通过在高加工温度下的熔融粘合而结合在一起，这使得在MEMS结构的密封腔之前能够更好地从基板中的电介质材料中去除化学物质。 MEMS结构的熔合结合减少了化学物质的脱气，并与腔形成过程相容。 通过熔接结合的MEMS结构由于较高的接合率而与共晶接合机械地更强。 此外，熔接可以在MEMS结构中形成贯穿衬底通孔（TSV）。

    MEMS Devices and Methods for Forming the Same
    7.
    发明申请
    MEMS Devices and Methods for Forming the Same 有权
    MEMS器件及其形成方法

    公开(公告)号：US20130140650A1

    公开(公告)日：2013-06-06

    申请号：US13310422

    申请日：2011-12-02

    Applicant: Te-Hao Lee ,  Yuan-Chih Hsieh

    Inventor： Te-Hao Lee ,  Yuan-Chih Hsieh

    IPC: H01L29/84 ,  H01L21/02

    CPC classification number: B81B3/0021 ,  B81B2201/0235 ,  B81B2207/098 ,  B81C1/00301 ,  G01P15/0802 ,  G01P15/125 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

    Abstract: A method includes forming a Micro-Electro-Mechanical System (MEMS) device on a front surface of a substrate. After the step of forming the MEMS device, a through-opening is formed in the substrate, wherein the through-opening is formed from a backside of the substrate. The through-opening is filled with a dielectric material, which insulates a first portion of the substrate from a second portion of the substrate. An electrical connection is formed on the backside of the substrate. The electrical connection is electrically coupled to the MEMS device through the first portion of the substrate.

    Abstract translation: 一种方法包括在基板的前表面上形成微电子机械系统（MEMS）装置。 在形成MEMS器件的步骤之后，在衬底中形成通孔，其中通孔由衬底的背面形成。 通孔填充有电介质材料，其将衬底的第一部分与衬底的第二部分绝缘。 在基板的背面形成电连接。 电连接通过衬底的第一部分电耦合到MEMS器件。

    High aspect ratio MEMS devices and methods for forming the same
    8.
    发明授权
    High aspect ratio MEMS devices and methods for forming the same 有权
    高纵横比MEMS器件及其形成方法

    公开(公告)号：US08828772B2

    公开(公告)日：2014-09-09

    申请号：US13412257

    申请日：2012-03-05

    Applicant: Te-Hao Lee

    Inventor： Te-Hao Lee

    IPC: H01L21/316

    CPC classification number: B81C1/00619 ,  B81C2201/0122 ,  B81C2201/0178

    Abstract: An HF vapor etch etches high aspect ratio openings to form MEMS devices and other tightly-packed semiconductor devices with 0.2 um air gaps between structures. The HF vapor etch etches oxide plugs and gaps with void portions and oxide liner portions and further etches oxide layers that are buried beneath silicon and other structures and is ideally suited to release cantilevers and other MEMS devices. The HF vapor etches at room temperature and atmospheric pressure in one embodiment. A process sequence is provided that forms MEMS devices including cantilevers and lateral, in-plane electrodes that are stationary and vibration resistant.

    Abstract translation: HF蒸汽蚀刻蚀刻高纵横比开口以形成MEMS器件和其他紧密堆积的半导体器件，其中在结构之间具有0.2um的气隙。 HF蒸汽蚀刻蚀刻具有空隙部分和氧化物衬垫部分的氧化物塞和间隙，并进一步蚀刻氧化物层，其被埋在硅和其它结构之下，并且理想地适合于释放悬臂和其它MEMS器件。 在一个实施方案中，HF蒸气在室温和大气压下蚀刻。 提供了一种形成MEMS器件的工艺顺序，其包括静止和抗振动的悬臂和侧向平面内的电极。

    MEMS devices and methods for forming the same
    9.
    发明授权
    MEMS devices and methods for forming the same 有权
    MEMS器件及其形成方法

    公开(公告)号：US08729646B2

    公开(公告)日：2014-05-20

    申请号：US13571258

    申请日：2012-08-09

    Applicant: Chia-Hua Chu ,  Chun-Wen Cheng ,  Te-Hao Lee ,  Chung-Hsien Lin

    Inventor： Chia-Hua Chu ,  Chun-Wen Cheng ,  Te-Hao Lee ,  Chung-Hsien Lin

    IPC: H01L29/84

    CPC classification number: B81B3/0059 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C2203/0118 ,  G01P15/0802 ,  G01P15/125 ,  H04R2201/003

    Abstract: A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.

    Abstract translation: 一种器件包括其中具有MEMS器件的微机电系统（MEMS）晶片。 MEMS器件包括可移动元件和MEMS晶片中的第一开口。 可移动元件设置在第一开口中。 载体晶片结合到MEMS晶片。 载体晶片包括连接到第一开口的第二开口，其中第二开口包括从载体晶片的表面延伸到载体晶片中的入口部分和比入口部分更宽的内部部分，其中内部部分更深 在载体晶片中比入口部分。

    MEMS Devices and Methods for Forming the Same
    10.
    发明申请
    MEMS Devices and Methods for Forming the Same 有权
    MEMS器件及其形成方法

    公开(公告)号：US20140042562A1

    公开(公告)日：2014-02-13

    申请号：US13571258

    申请日：2012-08-09

    Applicant: Chia-Hua Chu ,  Chun-Wen Cheng ,  Te-Hao Lee ,  Chung-Hsien Lin

    Inventor： Chia-Hua Chu ,  Chun-Wen Cheng ,  Te-Hao Lee ,  Chung-Hsien Lin

    IPC: H01L21/306 ,  H01L29/84

    CPC classification number: B81B3/0059 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C2203/0118 ,  G01P15/0802 ,  G01P15/125 ,  H04R2201/003

    Abstract: A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.

    Abstract translation: 一种器件包括其中具有MEMS器件的微机电系统（MEMS）晶片。 MEMS器件包括可移动元件和MEMS晶片中的第一开口。 可移动元件设置在第一开口中。 载体晶片结合到MEMS晶片。 载体晶片包括连接到第一开口的第二开口，其中第二开口包括从载体晶片的表面延伸到载体晶片中的入口部分和比入口部分更宽的内部部分，其中内部部分更深 在载体晶片中比入口部分。

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