公开(公告)号：US06849523B2

公开(公告)日：2005-02-01

申请号：US10387285

申请日：2003-03-12

申请人： Te-Tsung Chao ,  Shu-Shen Chiu

发明人： Te-Tsung Chao ,  Shu-Shen Chiu

IPC分类号： H01L21/301 ,  H01L21/46 ,  H01L21/78

CPC分类号： H01L21/78 ,  H01L21/6836 ,  H01L2221/68327

摘要： A process for separating IC dies from a wafer substrate. In one embodiment, complete separation channels are initially cut through the wafer between dies along one axis. Next, partial separation channels are cut into the wafer along an intersecting axis, leaving wafer material connecting adjacent dies. In another embodiment, partial separation channels are cut into the wafer along one axis, after which complete separation channels are cut through the wafer along the intersecting axis. In still another embodiment, partial separation channels are cut along both axes.

摘要翻译： 用于从晶片衬底分离IC管芯的工艺。 在一个实施例中，完全分离通道最初沿着一个轴线切割穿过管芯之间的晶片。 接下来，沿着交叉轴将部分分离通道切入晶片，留下晶片材料连接相邻的模具。 在另一个实施例中，沿着一个轴将部分分离通道切入晶片，之后沿着相交轴线将整个分离通道切割通过晶片。 在另一个实施例中，沿两个轴切割部分分离通道。