公开(公告)号：US08154087B2

公开(公告)日：2012-04-10

申请号：US13107739

申请日：2011-05-13

申请人： Ted E. Cook, Jr. ,  Bernhard Sell ,  Anand Murthy

发明人： Ted E. Cook, Jr. ,  Bernhard Sell ,  Anand Murthy

IPC分类号： H01L27/088

CPC分类号： H01L29/7848 ,  H01L29/66621 ,  H01L29/66636 ,  H01L29/7834

摘要： A multi-component strain-inducing semiconductor region is described. In an embodiment, formation of such a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In one embodiment, the multi-component strain-inducing material region comprises a first portion and a second portion which are separated by an interface. In a specific embodiment, the concentration of charge-carrier dopant impurity atoms of the two portions are different from one another at the interface.

摘要翻译： 描述了多组分应变诱导半导体区域。 在一个实施方案中，在与晶体衬底横向相邻的这种应变诱导半导体区域的形成导致赋予晶体衬底的单轴应变，从而提供应变晶体衬底。 在一个实施例中，多组分应变诱导材料区域包括由界面分离的第一部分和第二部分。 在具体实施方案中，两部分的电荷 - 载流子掺杂剂杂质原子的浓度在界面处彼此不同。

公开(公告)号：US07943469B2

公开(公告)日：2011-05-17

申请号：US11605739

申请日：2006-11-28

申请人： Ted E. Cook, Jr. ,  Bernhard Sell ,  Anand Murthy

发明人： Ted E. Cook, Jr. ,  Bernhard Sell ,  Anand Murthy

IPC分类号： H01L21/336

CPC分类号： H01L29/7848 ,  H01L29/66621 ,  H01L29/66636 ,  H01L29/7834

摘要： A multi-component strain-inducing semiconductor region is described. In an embodiment, formation of such a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In one embodiment, the multi-component strain-inducing material region comprises a first portion and a second portion which are separated by an interface. In a specific embodiment, the concentration of charge-carrier dopant impurity atoms of the two portions are different from one another at the interface.

摘要翻译： 描述了多组分应变诱导半导体区域。 在一个实施方案中，在与晶体衬底横向相邻的这种应变诱导半导体区域的形成导致赋予晶体衬底的单轴应变，从而提供应变晶体衬底。 在一个实施例中，多组分应变诱导材料区域包括由界面分离的第一部分和第二部分。 在具体实施方案中，两部分的电荷 - 载流子掺杂剂杂质原子的浓度在界面处彼此不同。