公开(公告)号：US20140342521A1

公开(公告)日：2014-11-20

申请号：US14451485

申请日：2014-08-05

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  Jarvis Benjamin Jacobs ,  Ajith Varghese

IPC: H01L21/324 ,  H01L21/265 ,  H01L29/66

CPC classification number: H01L21/324 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/823412 ,  H01L21/823462 ,  H01L29/105 ,  H01L29/66477

Abstract: A two-step thermal treatment method consists of performing ion implantation in a silicon substrate of the semiconductor device. A first thermal treatment procedure is performed on the semiconductor device. A second thermal treatment procedure is consecutively performed on the semiconductor device to reduce damage produced by the ion implantation.

Abstract translation: 两步热处理方法包括在半导体器件的硅衬底中进行离子注入。 在半导体器件上执行第一热处理程序。 在半导体器件上连续执行第二热处理程序以减少由离子注入产生的损伤。

公开(公告)号：US09054056B2

公开(公告)日：2015-06-09

申请号：US14451489

申请日：2014-08-05

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  Jarvis Benjamin Jacobs ,  Ajith Varghese

IPC: H01L21/469 ,  H01L21/324 ,  H01L21/265 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L21/324 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/823412 ,  H01L21/823462 ,  H01L29/105 ,  H01L29/66477

Abstract: A two-step thermal treatment method consists of performing ion implantation in a silicon substrate of the semiconductor device. A first thermal treatment procedure is performed on the semiconductor device. A second thermal treatment procedure is consecutively performed on the semiconductor device to reduce damage produced by the ion implantation.

Abstract translation: 两步热处理方法包括在半导体器件的硅衬底中进行离子注入。 在半导体器件上执行第一热处理程序。 在半导体器件上连续执行第二热处理程序以减少由离子注入产生的损伤。

公开(公告)号：US09029251B2

公开(公告)日：2015-05-12

申请号：US14451485

申请日：2014-08-05

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  Jarvis Benjamin Jacobs ,  Ajith Varghese

IPC: H01L21/425 ,  H01L21/324 ,  H01L21/265 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L21/324 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/823412 ,  H01L21/823462 ,  H01L29/105 ,  H01L29/66477

Abstract: A two-step thermal treatment method consists of performing ion implantation in a silicon substrate of the semiconductor device. A first thermal treatment procedure is performed on the semiconductor device. A second thermal treatment procedure is consecutively performed on the semiconductor device to reduce damage produced by the ion implantation.

公开(公告)号：US20140339609A1

公开(公告)日：2014-11-20

申请号：US14451489

申请日：2014-08-05

Applicant: Texas Instruments Incorporated

Inventor： Hiroaki Niimi ,  Jarvis Benjamin Jacobs ,  Ajith Varghese

IPC: H01L21/324 ,  H01L21/265 ,  H01L21/8234

CPC classification number: H01L21/324 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/823412 ,  H01L21/823462 ,  H01L29/105 ,  H01L29/66477

Abstract: A two-step thermal treatment method consists of performing ion implantation in a silicon substrate of the semiconductor device. A first thermal treatment procedure is performed on the semiconductor device. A second thermal treatment procedure is consecutively performed on the semiconductor device to reduce damage produced by the ion implantation.