公开(公告)号：US08988131B2

公开(公告)日：2015-03-24

申请号：US13946345

申请日：2013-07-19

申请人： Texas Instruments Incorporated

发明人： Aline Claude Sadate ,  Richard Turkson

IPC分类号： H03K17/04 ,  H03K17/284

CPC分类号： H03K17/284 ,  H03K17/163

摘要： The disclosed transistor switching methodology enables independent control of transistor turn-on delay and slew rate, including charging, during a pre-charge period, a transistor control input to a threshold voltage VT with a predetermined turn-on delay; and then charging, during a switch-on period, the transistor control input from VT to an operating point with a predetermined slew rate. This methodology is adaptable to load switching applications, for example, to control a high side/low side load switch such that, during the switch on period, the output voltage supplied to the load rises from zero volts to an operating load voltage with the predetermined slew rate. In one embodiment, I_delay and I_slew_rate currents are used to charge the transistor control input respectively during the pre-charge and switch-on periods. In another embodiment, the I-delay and I-slew rate currents are controlled by a replica switch with a control input coupled to the control input of a main switch, with the replica switch characterized by a threshold voltage substantially identical to the main switch threshold voltage VT.

摘要翻译： 所公开的晶体管开关方法能够独立地控制晶体管导通延迟和转换速率，包括在预充电周期期间以预定导通延迟将晶体管控制输入到阈值电压VT; 然后在接通周期期间，以VT以预定的转换速率从VT向工作点输入晶体管。 该方法适用于负载开关应用，例如，用于控制高端/低端负载开关，使得在开启期间，提供给负载的输出电压从零伏特升高到具有预定的工作负载电压 压摆率 在一个实施例中，I_delay和I_slew_rate电流用于在预充电和接通周期期间分别对晶体管控制输入充电。 在另一个实施例中，I延迟和I转换速率电流由具有耦合到主开关的控制输入的控制输入的复制开关控制，其中复制开关的特征在于与主开关阈值基本相同的阈值电压 电压VT。

公开(公告)号：US20150022258A1

公开(公告)日：2015-01-22

申请号：US13946345

申请日：2013-07-19

申请人： Texas Instruments Incorporated

发明人： Aline Claude Sadate ,  Richard Turkson

IPC分类号： H03K17/284

CPC分类号： H03K17/284 ,  H03K17/163

摘要： The disclosed transistor switching methodology enables independent control of transistor turn-on delay and slew rate, including charging, during a pre-charge period, a transistor control input to a threshold voltage VT with a predetermined turn-on delay; and then charging, during a switch-on period, the transistor control input from VT to an operating point with a predetermined slew rate. This methodology is adaptable to load switching applications, for example, to control a high side/low side load switch such that, during the switch on period, the output voltage supplied to the load rises from zero volts to an operating load voltage with the predetermined slew rate. In one embodiment, I_delay and I_slew_rate currents are used to charge the transistor control input respectively during the pre-charge and switch-on periods. In another embodiment, the I-delay and I-slew rate currents are controlled by a replica switch with a control input coupled to the control input of a main switch, with the replica switch characterized by a threshold voltage substantially identical to the main switch threshold voltage VT.

摘要翻译： 所公开的晶体管开关方法能够独立地控制晶体管导通延迟和转换速率，包括在预充电周期期间以预定导通延迟将晶体管控制输入到阈值电压VT; 然后在接通周期期间，以VT以预定的转换速率从VT向工作点输入晶体管。 该方法适用于负载开关应用，例如，用于控制高端/低端负载开关，使得在开启期间，提供给负载的输出电压从零伏特升高到具有预定的工作负载电压 压摆率 在一个实施例中，I_delay和I_slew_rate电流用于在预充电和接通周期期间分别对晶体管控制输入充电。 在另一个实施例中，I延迟和I转换速率电流由具有耦合到主开关的控制输入的控制输入的复制开关控制，其中复制开关的特征在于与主开关阈值基本相同的阈值电压 电压VT。