公开(公告)号：US08822236B2

公开(公告)日：2014-09-02

申请号：US13949581

申请日：2013-07-24

Applicant: Texas Instruments Incorporated

Inventor： Bo-Yang Lin ,  Yen Lee ,  Haowen Bu ,  Mark Robert Visokay

IPC: H01L21/00 ,  H01L49/02 ,  H01L27/115 ,  H01L21/02

CPC classification number: H01L21/02225 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/57

Abstract: An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (PECVD). Source gases of silane (SiH4) and nitrogen (N2) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at a support electrode. Low-frequency RF energy (e.g., 360 kHz) is applied to the support electrode; high-frequency RF energy (e.g., 13.56 MHz) is optionally provided to the parallel electrode. Process temperature is above 350° C., at a pressure of about 2.5 torr. Any hydrogen present in the resulting silicon nitride film is bound by N—H bonds rather than Si—H bonds, and is thus more strongly bound to the film. The silicon nitride can serve as passivation for ferroelectric material that may degrade electrically if contaminated by hydrogen.

Abstract translation: 通过等离子体增强化学气相沉积（PECVD）沉积氮化硅的无氨方法。 将硅烷（SiH4）和氮（N2）的源气体提供给平行板等离子体反应器，其中能量电容耦合到等离子体，并且其中正在处理的晶片已经被放置在支撑电极处。 将低频RF能量（例如，360kHz）施加到支撑电极; 可选地，将高频RF能量（例如，13.56MHz）提供给并联电极。 工艺温度高于350℃，压力约为2.5托。 存在于所得氮化硅膜中的任何氢由N-H键而不是Si-H键结合，因此与膜更牢固地结合。 氮化硅可用作铁电材料的钝化剂，如果被氢气污染，则可能会电解。

公开(公告)号：US20130309783A1

公开(公告)日：2013-11-21

申请号：US13949581

申请日：2013-07-24

Applicant: Texas Instruments Incorporated

Inventor： Bo-Yang Lin ,  Yen Lee ,  Haowen Bu ,  Mark Robert Visokay

IPC: H01L21/02

CPC classification number: H01L21/02225 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/57

Abstract: An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (PECVD). Source gases of silane (SiH4) and nitrogen (N2) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at a support electrode. Low-frequency RF energy (e.g., 360 kHz) is applied to the support electrode; high-frequency RF energy (e.g., 13.56 MHz) is optionally provided to the parallel electrode. Process temperature is above 350° C., at a pressure of about 2.5 torr. Any hydrogen present in the resulting silicon nitride film is bound by N—H bonds rather than Si—H bonds, and is thus more strongly bound to the film. The silicon nitride can serve as passivation for ferroelectric material that may degrade electrically if contaminated by hydrogen.

Abstract translation: 通过等离子体增强化学气相沉积（PECVD）沉积氮化硅的无氨方法。 将硅烷（SiH 4）和氮（N 2）的源气体提供给平行板等离子体反应器，其中能量电容耦合到等离子体，并且其中正在处理的晶片已经被放置在支撑电极处。 将低频RF能量（例如，360kHz）施加到支撑电极; 可选地，将高频RF能量（例如，13.56MHz）提供给并联电极。 工艺温度高于350℃，压力约为2.5托。 存在于所得氮化硅膜中的任何氢由N-H键而不是Si-H键结合，因此与膜更牢固地结合。 氮化硅可用作铁电材料的钝化剂，如果被氢气污染，则可能会电解。