公开(公告)号：US20200343099A1

公开(公告)日：2020-10-29

申请号：US16552321

申请日：2019-08-27

Applicant: Texas Instruments Incorporated

Inventor： Byron Joseph Palla ,  Stephen Alan Keller ,  Brian Edward Hornung ,  Brian K. Kirpatrick ,  Douglas Ticknor Grider

IPC: H01L21/311

Abstract: A method of forming an integrated circuit includes forming a first layer having a first material type over a first side of a semiconductor wafer. A second layer having a second different material type is removed from a second opposing side of the semiconductor wafer using a first process that removes the second material type at a greater rate than the first material type. Subsequent to removing the second layer, the first layer is removed using a second different process.