公开(公告)号：US20250069999A1

公开(公告)日：2025-02-27

申请号：US18454242

申请日：2023-08-23

Applicant: Texas Instruments Incorporated

Inventor： Huo Yun Duan ,  Qin Peng ,  Tian Sheng Chen ,  Xiangrui Li ,  Hang Yan

IPC: H01L23/495 ,  C25D3/12 ,  C25D3/30 ,  C25D3/46 ,  C25D3/48 ,  C25D3/50 ,  C25D7/12 ,  H01L21/48 ,  H01L23/31

Abstract: A semiconductor package includes a semiconductor component and a plurality of leads electrically connected to the semiconductor component. Each of the leads has a first surface, and has a second surface opposite from the first surface, with a solderable metal on the first surface and the second surface. The solderable metal has a first average thickness on the first surfaces, and has a second average thickness on the second surfaces. The second average thickness is 10 percent to 80 percent of the first average thickness. The semiconductor package is formed by concurrently electroplating the solderable metal on the first surfaces and on the second surfaces. The solderable metal is electroplated on the first surfaces with a first average current, and is electroplated on the second surfaces with a second average current. The second average current is 10 percent to 80 percent of the first average current.