公开(公告)号：US20240146173A1

公开(公告)日：2024-05-02

申请号：US17975391

申请日：2022-10-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jing Ji ,  Jian Liang

IPC: H02M1/00 ,  H02M3/157

CPC classification number: H02M1/0029 ,  H02M1/0009 ,  H02M1/0012 ,  H02M3/157

Abstract: In one example, an apparatus comprises an amplifier, a ramp generation circuit, and a comparator. The amplifier has a reference input, a power converter feedback input, and an amplifier output. The ramp generation circuit has a ramp slope control terminal and a ramp signal terminal, the ramp slope control terminal coupled to the amplifier output. The comparator has a current sense input, a ramp signal input, and a comparator output, in which the ramp signal input is coupled to the ramp signal terminal, and the comparator output is coupled to a power converter control terminal.

公开(公告)号：US20240283285A1

公开(公告)日：2024-08-22

申请号：US18171480

申请日：2023-02-20

Applicant: Texas Instruments Incorporated

Inventor： Jing Ji ,  Jian Liang ,  Shih-chao Hsu ,  Zejing Wang

IPC: H02J9/06 ,  H02J7/00 ,  H02M3/158

CPC classification number: H02J9/061 ,  H02J7/0013 ,  H02J7/005 ,  H02J7/007182 ,  H02M3/158 ,  H02J2207/20

Abstract: A power system includes a transistor device (e.g., one or more NFETs) is coupled between input voltage and switching node terminals, to provide a variable sense resistance. The system may further include low-side and high-side switching elements, with the low-side switching element coupled between a ground terminal and the switching node terminal, and the high-side switching element coupled between the switching node terminal and an output voltage terminal. The system may be configured to determine its mode of operation, based on primary and backup battery voltages, and enable a corresponding control loop based on that determined mode. With a control loop enabled, the system may be further configured to control the transistor device to provide a variable sense resistor based on a given control parameter. The low-side switching element may be shared by the modes, and external to a chip that includes the high-side switching element and transistor device.