公开(公告)号：US09840781B2

公开(公告)日：2017-12-12

申请号：US14557546

申请日：2014-12-02

Applicant: Texas Instruments Incorporated

Inventor： Mona M. Eissa ,  Yousong Zhang ,  Mark Jenson

IPC: C23F1/28 ,  H01L21/02 ,  G01R33/04 ,  C09K13/06 ,  C23F1/02 ,  G03F7/00

CPC classification number: C23F1/28 ,  C09K13/06 ,  C23F1/02 ,  G01R33/04 ,  G03F7/0005 ,  H01L21/02107

Abstract: An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern.

公开(公告)号：US10266950B2

公开(公告)日：2019-04-23

申请号：US15809143

申请日：2017-11-10

Applicant: Texas Instruments Incorporated

Inventor： Mona M. Eissa ,  Yousong Zhang ,  Mark Jenson

IPC: C23F1/28 ,  H01L21/02 ,  G01R33/04 ,  C09K13/06 ,  C23F1/02 ,  G03F7/00

Abstract: An etchant for simultaneously etching NiFe and AlN with approximately equal etch rates that comprises phosphoric acid, acetic acid, nitric acid and deionized water. Alternating layers of NiFe and AlN may be used to form a magnetic core of a fluxgate magnetometer in an integrated circuit. The wet etch provides a good etch rate of the alternating layers with good dimensional control and with a good resulting magnetic core profile. The alternating layers of NiFe and AlN may be encapsulated with a stress relief layer. A resist pattern may be used to define the magnetic core geometry. The overetch time of the wet etch may be controlled so that the magnetic core pattern extends at least 1.5 um beyond the base of the magnetic core post etch. The photo mask used to form the resist pattern may also be used to form a stress relief etch pattern.