公开(公告)号：US12150298B2

公开(公告)日：2024-11-19

申请号：US17515147

申请日：2021-10-29

Applicant: Texas Instruments Incorporated

Inventor： Anand Seshadri ,  Kemal Tamer San ,  Sunil Kumar Dusa ,  Michael Ball ,  Akram A. Salman

IPC: H01L21/00 ,  G11C17/16 ,  G11C17/18 ,  H01L23/525 ,  H10B20/20

Abstract: An integrated circuit (IC), comprising a fuse structure (eFuse) formed in a resistive layer over a semiconductor substrate, the eFuse subject to a change in resistance through the controlled application of a programming current from a programming voltage source connected to a first terminal of the eFuse; a blow transistor formed on or over the substrate and having a control terminal configured to cause the programming current to flow through the eFuse in response to a programming signal; an intermediate transistor formed on or over the substrate and electrically coupled in series between a second terminal of the eFuse and the blow transistor; and, control circuitry formed on or over the substrate and electrically coupled to a node between the second terminal of the eFuse and the intermediate transistor, the control circuitry configured to reduce the flow of programming current through the eFuse in the event that a voltage detected at the node reaches a threshold level.

公开(公告)号：US20230138308A1

公开(公告)日：2023-05-04

申请号：US17515147

申请日：2021-10-29

Applicant: Texas Instruments Incorporated

Inventor： Anand Seshadri ,  Kemal Tamer San ,  Sunil Kumar Dusa ,  Michael Ball ,  Akram A. Salman

IPC: H01L27/112 ,  H01L23/525 ,  G11C17/18 ,  G11C17/16

Abstract: An integrated circuit (IC), comprising a fuse structure (eFuse) formed in a resistive layer over a semiconductor substrate, the eFuse subject to a change in resistance through the controlled application of a programming current from a programming voltage source connected to a first terminal of the eFuse; a blow transistor formed on or over the substrate and having a control terminal configured to cause the programming current to flow through the eFuse in response to a programming signal; an intermediate transistor formed on or over the substrate and electrically coupled in series between a second terminal of the eFuse and the blow transistor; and, control circuitry formed on or over the substrate and electrically coupled to a node between the second terminal of the eFuse and the intermediate transistor, the control circuitry configured to reduce the flow of programming current through the eFuse in the event that a voltage detected at the node reaches a threshold level.