公开(公告)号：US11037816B2

公开(公告)日：2021-06-15

申请号：US15649774

申请日：2017-07-14

Applicant: Texas Instruments Incorporated

Inventor： Hong Yang ,  Michael F Chisholm ,  Yufei Xiong ,  Yunlong Liu

IPC: H01L21/762 ,  C23C16/30

Abstract: In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.