公开(公告)号：US20180261495A1

公开(公告)日：2018-09-13

申请号：US15649774

申请日：2017-07-14

Applicant: Texas Instruments Incorporated

Inventor： Hong YANG ,  Michael F. CHISHOLM ,  Yufei XIONG ,  Yunlong LIU

IPC: H01L21/762

Abstract: In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.

公开(公告)号：US20210272842A1

公开(公告)日：2021-09-02

申请号：US17322274

申请日：2021-05-17

Applicant: Texas Instruments Incorporated

Inventor： Hong YANG ,  Michael F. CHISHOLM ,  Yufei XIONG ,  Yunlong LIU

IPC: H01L21/762

Abstract: In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.