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公开(公告)号:US20180261495A1
公开(公告)日:2018-09-13
申请号:US15649774
申请日:2017-07-14
Applicant: Texas Instruments Incorporated
Inventor: Hong YANG , Michael F. CHISHOLM , Yufei XIONG , Yunlong LIU
IPC: H01L21/762
Abstract: In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.
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公开(公告)号:US20210272842A1
公开(公告)日:2021-09-02
申请号:US17322274
申请日:2021-05-17
Applicant: Texas Instruments Incorporated
Inventor: Hong YANG , Michael F. CHISHOLM , Yufei XIONG , Yunlong LIU
IPC: H01L21/762
Abstract: In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.
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