公开(公告)号：US12231032B2

公开(公告)日：2025-02-18

申请号：US18391809

申请日：2023-12-21

Applicant: Texas Instruments Incorporated

Inventor： Bernhard Wolfgang Ruck ,  Ruediger Kuhn ,  Oliver Nehrig

IPC: H02M1/08 ,  G05F1/46 ,  H02M1/00

Abstract: A driver includes a low-resistance charging path between a supply voltage rail and a first output node, a high-resistance charging path between the supply voltage rail and the first output node, an inverter coupled to the first output node and configured to enable and disable the low-resistance charging path, and a high-resistance discharging path between the first output node and a second output node. The first output node is coupled to a control terminal of a pass gate transistor in some implementations. The low-resistance charging path charges a voltage on the first output node to a threshold voltage of the pass gate transistor, and the high-resistance charging path charges the voltage on the first output node greater than the threshold voltage of the pass gate transistor. The high-resistance discharging path discharges the voltage on the first output node.

公开(公告)号：US11901803B2

公开(公告)日：2024-02-13

申请号：US17560756

申请日：2021-12-23

Applicant: Texas Instruments Incorporated

Inventor： Bernhard Wolfgang Ruck ,  Ruediger Kuhn ,  Oliver Nehrig

IPC: H02M1/08 ,  H02M3/158 ,  H02M3/157 ,  G05F1/46 ,  H02M1/00

CPC classification number: H02M1/08 ,  G05F1/46 ,  H02M1/0029 ,  H02M3/157 ,  H02M3/1584

Abstract: A driver includes a low-resistance charging path between a supply voltage rail and a first output node, a high-resistance charging path between the supply voltage rail and the first output node, an inverter coupled to the first output node and configured to enable and disable the low-resistance charging path, and a high-resistance discharging path between the first output node and a second output node. The first output node is coupled to a control terminal of a pass gate transistor in some implementations. The low-resistance charging path charges a voltage on the first output node to a threshold voltage of the pass gate transistor, and the high-resistance charging path charges the voltage on the first output node greater than the threshold voltage of the pass gate transistor. The high-resistance discharging path discharges the voltage on the first output node.