公开(公告)号：US20230223395A1

公开(公告)日：2023-07-13

申请号：US17854998

申请日：2022-06-30

Applicant: Texas Instruments Incorporated

Inventor： Sunglyong Kim ,  Sudheer Prasad ,  Sreeram N. S. ,  Sandip Lashkare ,  Christopher Kocon

IPC: H01L27/02

CPC classification number: H01L27/0255 ,  H01L27/0292

Abstract: Electrostatic discharge (ESD) protection devices with high current capability are described. The ESD protection device may include a pair of bidirectional diodes (first and second bidirectional diodes) connected in series. Each of the bidirectional diodes includes a low capacitance (LC) diode and a bypass diode connected in parallel. During ESD events, current flows through the LC diode of the first bidirectional diode and the bypass diode of the second bidirectional diode. Particular arrangements of the LC diodes and the bypass diodes are devised to facilitate uniform distribution of the current throughout an area occupied by the ESD protection device.

公开(公告)号：US20230223393A1

公开(公告)日：2023-07-13

申请号：US17855105

申请日：2022-06-30

Applicant: Texas Instruments Incorporated

Inventor： Christopher Kocon ,  Sunglyong Kim ,  Sreeram N. S. ,  Sudheer Prasad ,  Sandip Lashkare

IPC: H01L27/02

CPC classification number: H01L27/0248

Abstract: Semiconductor devices with high current capability for ESD or surge protection are described. The semiconductor device includes multiple n-type semiconductor regions in a p-type semiconductor layer. Each of the n-type semiconductor regions may have a footprint with a circular, oval, or obround shape. Moreover, a boundary of the footprint may be spaced apart from an isolation structure that surrounds the p-type semiconductor layer. The n-type semiconductor regions may be coupled to a terminal through individual groups of contacts that are connected to the n-type semiconductor regions, respectively. Additionally, or alternatively, the p-type semiconductor layer surrounded by the isolation structure may not include any re-entrant corner.