公开(公告)号：US10937905B2

公开(公告)日：2021-03-02

申请号：US14286202

申请日：2014-05-23

Applicant: Texas Instruments Incorporated

Inventor： Yongxi Zhang ,  Philip L. Hower ,  Sameer P. Pendharkar ,  John Lin ,  Guru Mathur ,  Scott Balster ,  Victor Sinow

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/66 ,  H01L21/761 ,  H01L29/10 ,  H01L29/423

Abstract: A semiconductor device includes at least a first transistor including at least a second level metal layer (second metal layer) above a first level metal layer coupled by a source contact to a source region doped with a first dopant type. The second level metal layer is coupled by a drain contact to a drain region doped with the first dopant type. A gate stack is between the source region and drain region having the second level metal layer coupled by a contact thereto. The second level metal layer is coupled by a contact to a first isolation region doped with the second dopant type. The source region and drain region are within the first isolation region. A second isolation region doped with the first dopant type encloses the first isolation region, and is not coupled to the second level metal layer so that it electrically floats.