公开(公告)号：US20210005537A1

公开(公告)日：2021-01-07

申请号：US17027657

申请日：2020-09-21

Applicant: Texas Instruments Incorporated

Inventor： Kurt Peter Wachtler ,  Seunghyun Chae ,  Benjamin Stassen Cook

IPC: H01L23/495 ,  H01L23/00

Abstract: An integrated circuit die may be fabricating to have a plurality of contacts. A metal post may be formed on each of the plurality of contacts. A plurality of bumps may be formed on a plurality of contact regions of a leadframe or on the posts, in which the plurality of bumps are formed with a material that includes metal nanoparticles. The IC die may be attached to the leadframe by aligning the metal posts to the leadframe and sintering the metal nanoparticles in the plurality of bumps to form a sintered metal bond between each metal post and corresponding contact region of the leadframe.

公开(公告)号：US20170309549A1

公开(公告)日：2017-10-26

申请号：US15135318

申请日：2016-04-21

Applicant: Texas Instruments Incorporated

Inventor： Kurt Peter Wachtler ,  Seunghyun Chae ,  Benjamin Stassen Cook

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/60

CPC classification number: H01L23/49503 ,  H01L23/49541 ,  H01L23/49572 ,  H01L23/5383 ,  H01L2021/60022 ,  H01L2224/16245 ,  H01L2224/81 ,  H01L2224/81193 ,  H01L2224/97 ,  H01L2924/181 ,  H01L2924/00012

Abstract: An integrated circuit die may be fabricating to have a plurality of contacts. A metal post may be formed on each of the plurality of contacts. A plurality of bumps may be formed on a plurality of contact regions of a leadframe or on the posts, in which the plurality of bumps are formed with a material that includes metal nanoparticles. The IC die may be attached to the leadframe by aligning the metal posts to the leadframe and sintering the metal nanoparticles in the plurality of bumps to form a sintered metal bond between each metal post and corresponding contact region of the leadframe.