公开(公告)号：US11616137B2

公开(公告)日：2023-03-28

申请号：US16821165

申请日：2020-03-17

Applicant: Texas Instruments Incorporated

Inventor： Haian Lin ,  Shuming Xu ,  Jacek Korec

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L29/47 ,  H01L29/872 ,  H01L29/417 ,  H01L29/10

Abstract: A semiconductor device containing a vertical power MOSFET with a planar gate and an integrated Schottky diode is formed by forming a source electrode on an extended drain of the vertical power MOSFET to form the Schottky diode and forming the source electrode on a source region of the vertical power MOSFET. The Schottky diode is connected through the source electrode to the source region. A drain electrode is formed at a bottom of a substrate of the semiconductor device. The Schottky diode is connected through the extended drain of the vertical power MOSFET to the drain electrode.