公开(公告)号：US09608105B2

公开(公告)日：2017-03-28

申请号：US14730748

申请日：2015-06-04

Applicant: Texas Instruments Incorporated

Inventor： Takehito Tamura ,  Binghua Hu ,  Sameer Pendharkar ,  Guru Mathur

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/7816 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823481 ,  H01L27/088 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/66659 ,  H01L29/7835

Abstract: The density of a transistor array is increased by forming one or more deep trench isolation structures in a semiconductor material. The deep trench isolation structures laterally surround the transistors in the array. The deep trench isolation structures limit the lateral diffusion of dopants and the lateral movement of charge carriers.

公开(公告)号：US10163678B2

公开(公告)日：2018-12-25

申请号：US14682823

申请日：2015-04-09

Applicant: Texas Instruments Incorporated

Inventor： Binghua Hu ,  Sameer Pendharkar ,  Guru Mathur ,  Takehito Tamura

IPC: H01L21/762 ,  H01L29/06 ,  H01L21/02 ,  H01L21/265 ,  H01L21/283 ,  H01L21/3205

Abstract: Forming a semiconductor structure by forming a plurality of trenches in a semiconductor material, forming a plurality of non-conductive structures in the plurality of trenches, and forming a doped region of the first conductivity type. The plurality of trenches are spaced apart from each other, have substantially equal depths, and include a first trench and a second trench. The plurality of non-conductive structures include a first non-conductive structure in the first trench and a second non-conductive structure in the second trench. The doped region is formed between the first non-conductive structure and the second non-conductive structure. No region of a second conductivity type lies horizontally in between the first non-conductive structure and the second non-conductive structure.

公开(公告)号：US09076863B2

公开(公告)日：2015-07-07

申请号：US13944864

申请日：2013-07-17

Applicant: Texas Instruments Incorporated

Inventor： Takehito Tamura ,  Binghua Hu ,  Sameer Pendharkar ,  Guru Mathur

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L29/7816 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823481 ,  H01L27/088 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/66659 ,  H01L29/7835

Abstract: The density of a transistor array is increased by forming one or more deep trench isolation structures in a semiconductor material. The deep trench isolation structures laterally surround the transistors in the array. The deep trench isolation structures limit the lateral diffusion of dopants and the lateral movement of charge carriers.

Abstract translation: 通过在半导体材料中形成一个或多个深沟槽隔离结构来增加晶体管阵列的密度。 深沟槽隔离结构横向围绕阵列中的晶体管。 深沟槽隔离结构限制了掺杂剂的横向扩散和载流子的横向移动。

公开(公告)号：US20150270391A1

公开(公告)日：2015-09-24

申请号：US14730748

申请日：2015-06-04

Applicant: Texas Instruments Incorporated

Inventor： Takehito Tamura ,  Binghua Hu ,  Sameer Pendharkar ,  Guru Mathur

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L29/7816 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823481 ,  H01L27/088 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/66659 ,  H01L29/7835

Abstract: The density of a transistor array is increased by forming one or more deep trench isolation structures in a semiconductor material. The deep trench isolation structures laterally surround the transistors in the array. The deep trench isolation structures limit the lateral diffusion of dopants and the lateral movement of charge carriers.

Abstract translation: 通过在半导体材料中形成一个或多个深沟槽隔离结构来增加晶体管阵列的密度。 深沟槽隔离结构横向围绕阵列中的晶体管。 深沟槽隔离结构限制了掺杂剂的横向扩散和载流子的横向移动。

公开(公告)号：US20150021687A1

公开(公告)日：2015-01-22

申请号：US13944864

申请日：2013-07-17

Applicant: Texas Instruments Incorporated

Inventor： Takehito Tamura ,  Binghua Hu ,  Sameer Pendharkar ,  Guru Mathur

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L29/7816 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823481 ,  H01L27/088 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/66659 ,  H01L29/7835

Abstract: The density of a transistor array is increased by forming one or more deep trench isolation structures in a semiconductor material. The deep trench isolation structures laterally surround the transistors in the array. The deep trench isolation structures limit the lateral diffusion of dopants and the lateral movement of charge carriers.

Abstract translation: 通过在半导体材料中形成一个或多个深沟槽隔离结构来增加晶体管阵列的密度。 深沟槽隔离结构横向围绕阵列中的晶体管。 深沟槽隔离结构限制了掺杂剂的横向扩散和载流子的横向移动。