公开(公告)号：US11276688B2

公开(公告)日：2022-03-15

申请号：US16430043

申请日：2019-06-03

Applicant: Texas Instruments Incorporated

Inventor： Vrashank Gurudatta Shukla ,  Mark Benjamin Welty ,  Lifang Lou

IPC: H01L27/08 ,  H01L23/495 ,  H01L29/66 ,  H01L29/06 ,  H01L29/866 ,  H01L27/02

Abstract: An electronic device includes a first-conductivity-type substrate and a second-conductivity-type epitaxial layer having a first dopant concentration. A first substrate region includes a second-conductivity-type buried layer and is enclosed by a first deep isolation structure. Within the first substrate region are a first doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration and a second doped region having the first conductivity type. A second substrate region includes a first-conductivity-type buried layer and is enclosed by a second deep isolation structure. Within the second substrate region is a third doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration.

公开(公告)号：US20200381424A1

公开(公告)日：2020-12-03

申请号：US16430043

申请日：2019-06-03

Applicant: Texas Instruments Incorporated

Inventor： Vrashank Gurudatta Shukla ,  Mark Benjamin Welty ,  Lifang Lou

IPC: H01L27/08 ,  H01L23/495 ,  H01L27/02 ,  H01L29/06 ,  H01L29/866 ,  H01L29/66

Abstract: An electronic device includes a first-conductivity-type substrate and a second-conductivity-type epitaxial layer having a first dopant concentration. A first substrate region includes a second-conductivity-type buried layer and is enclosed by a first deep isolation structure. Within the first substrate region are a first doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration and a second doped region having the first conductivity type. A second substrate region includes a first-conductivity-type buried layer and is enclosed by a second deep isolation structure. Within the second substrate region is a third doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration.