公开(公告)号：US20240113217A1

公开(公告)日：2024-04-04

申请号：US17958205

申请日：2022-09-30

Applicant: Texas Instruments Incorporated

Inventor： Hong Yang ,  Thomas Grebs ,  Yunlong Liu ,  Sunglyong Kim ,  Lindong Li ,  Peng Li ,  Seetharaman Sridhar ,  Yeguang Zhang ,  Sheng pin Yang

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/423

CPC classification number: H01L29/7813 ,  H01L21/823437 ,  H01L27/092 ,  H01L29/42368

Abstract: An integrated circuit includes first and second trenches in a semiconductor substrate and a semiconductor mesa between the first and second trenches. A source region having a first conductivity type and a body region having an opposite second conductivity type are located within the semiconductor mesa. A trench shield is located within the first trench, and a gate electrode is over the trench shield between first and second sidewalls of the first trench. A gate dielectric is on a sidewall of the first trench between the gate electrode and the body region, and a pre-metal dielectric (PMD) layer is over the gate electrode. A gate contact through the PMD layer touches the gate electrode between the first and second sidewalls, and a trench shield contact through the PMD layer touches the trench shield between the first and second sidewalls.