公开(公告)号：US08754495B1

公开(公告)日：2014-06-17

申请号：US13871713

申请日：2013-04-26

Applicant: Texas Instruments Incorporated

Inventor： Hiroyuki Tomomatsu ,  Motoaki Kusamaki ,  Kohichi Kubota ,  Yuta Masuda ,  Akihiro Sugihara ,  Hiroshi Sera Kitada ,  Takeshi Konno

IPC: H01L31/0232 ,  H01L31/042 ,  H01L27/144 ,  H01L27/146 ,  G11B7/131 ,  G11B7/00

CPC classification number: H01L27/1462 ,  H01L27/14643 ,  H01L27/14689

Abstract: A method of fabricating a photodiode array having different photodiode structures includes providing a semiconductor substrate having first and second diode areas including a bottom substrate portion doped with a first doping type, an intrinsic layer, and a top silicon layer doped with a second doping type. The second diode areas are implanted with the second doping type. A dopant concentration in the surface of the second diode areas is at least three times higher than in the first diode areas. The top silicon layer is thermally oxidized to form a thermal silicon oxide layer to provide a bottom Anti-Reflective Coating (ARC) layer. The second diode areas grow thermal silicon oxide thicker as compared to the first diode areas. A top ARC layer is deposited on the bottom ARC layer. First PDs are provided in the first diode areas and second PDs provided in the second diode areas.

Abstract translation: 制造具有不同光电二极管结构的光电二极管阵列的方法包括提供具有第一和第二二极管区域的半导体衬底，该第二和第二二极管区域包括掺杂有第一掺杂类型，本征层和掺杂有第二掺杂类型的顶部硅层的底部衬底部分。 第二二极管区域被注入第二掺杂类型。 第二二极管区域的表面中的掺杂剂浓度比第一二极管区域的至少高三倍。 顶部硅层被热氧化以形成热氧化硅层，以提供底部抗反射涂层（ARC）层。 与第一二极管区域相比，第二二极管区域增加热氧化硅更厚。 顶部ARC层沉积在底部ARC层上。 在第二二极管区域提供第一PD，并且在第二二极管区域中提供第二PD。