公开(公告)号：US09391287B1

公开(公告)日：2016-07-12

申请号：US14576878

申请日：2014-12-19

Applicant: The Board of Regents of the University of Nebraska

Inventor： Jinsong Huang ,  Qingfeng Dong ,  Rui Dong ,  Yuchuan Sao ,  Cheng Bi ,  Qi Wang ,  Zhengguo Xiao

IPC: H01L51/42 ,  H01L51/44 ,  H01L51/00

CPC classification number: H01L51/4213 ,  H01L51/0003 ,  H01L51/0037 ,  H01L51/0047 ,  H01L51/0094 ,  H01L51/424 ,  H01L2251/308 ,  Y02E10/549

Abstract: A semiconductor device and a method for fabrication of the semiconductor device are described that include a perovskite layer formed using a solution process with lead iodine and methylammonium halide. In an implementation, a semiconductor device that employs example techniques in accordance with the present disclosure includes a cathode layer; an anode layer; and an active layer disposed between the cathode layer and the anode layer, where the active layer includes a perovskite layer including an interdiffused and annealed lead iodine (PbI2) film and methylammonium halide (CH3NH3X) film. In implementations, a process for fabricating a continuous-perovskite semiconductor device that employs example techniques in accordance with the present disclosure includes spinning a PbI2 layer onto an ITO-covered glass; spinning an MAI layer onto the PbI2 layer; annealing the PbI2 layer and the MAI layer; spinning a PCBM layer onto a resulting perovskite layer; and depositing an Al layer.

Abstract translation: 描述了半导体器件和半导体器件的制造方法，其包括使用铅碘和甲基卤化铵的溶液法形成的钙钛矿层。 在一个实现中，采用根据本公开的示例技术的半导体器件包括阴极层; 阳极层; 以及设置在阴极层和阳极层之间的有源层，其中活性层包括包含相互扩散和退火的铅碘（PbI 2）膜和甲基卤化铵（CH 3 NH 3 X）膜的钙钛矿层。 在实现中，根据本公开的采用示例技术的连续钙钛矿半导体器件的制造方法包括将PbI 2层旋转到ITO覆盖的玻璃上; 将MAI层旋转到PbI2层上; 退火PbI2层和MAI层; 将PCBM层旋转到所得的钙钛矿层上; 并沉积Al层。