公开(公告)号：US20140079188A1

公开(公告)日：2014-03-20

申请号：US14026697

申请日：2013-09-13

Applicant: The Board of Trustees of the Leland Stanford Junior University

Inventor： Lambertus Hesselink ,  R. Fabian W. Pease ,  Piero Pianetta ,  Juan R. Maldonado ,  Yao-Te Cheng ,  Jason Ryan

IPC: H01J35/02

CPC classification number: H01J35/02 ,  H01J35/06 ,  H01J35/065 ,  H01J35/14 ,  H01J2235/087

Abstract: A photo-emitter x-ray source is provided that includes a photocathode electron source, a laser light source, where the laser light source illuminates the photocathode electron source to emit electrons, and an X-ray target, where the emitted electrons are focused on the X-ray target, where the X-ray target emits X-rays. The photocathode electron source can include alkali halides (such as CsBr and CsI), semiconductors (such as GaAs, InP), and theses materials modified with rare Earth element (such as Eu) doping, electron beam bombardment, and X-ray irradiation, and has a form factor that includes planar, patterned, of optically patterned. The X-ray target includes a material such as tungsten, copper, rhodium or molybdenum. The laser light source is pulsed or steered according to light modulators that can include acousto-optics, mode-locking, micro-mirror array, and liquid crystals, and includes a nano-aperture or nano-particle arrays, where the nano-aperture is a C-aperture or a circular aperture.

Abstract translation: 提供了一种光发射器x射线源，其包括光电阴极电子源，其中激光源照射光电阴极电子源发射电子的激光源，以及发射的电子聚焦在其上的X射线靶 X射线靶，其中X射线靶发射X射线。 光电阴极电子源可以包括碱金属卤化物（例如CsBr和CsI），半导体（例如GaAs，InP），以及用稀土元素（如Eu）掺杂，电子束轰击和X射线照射改性的这些材料， 并且具有包括光学图案化的平面，图案化的形状因子。 X射线靶包括诸如钨，铜，铑或钼的材料。 激光光源根据可以包括声光，锁模，微镜阵列和液晶的光调制器进行脉冲或转向，并且包括纳米孔径或纳米颗粒阵列，其中纳米孔径 C孔或圆形孔。

公开(公告)号：US09520260B2

公开(公告)日：2016-12-13

申请号：US14026697

申请日：2013-09-13

Applicant: The Board of Trustees of the Leland Stanford Junior University

Inventor： Lambertus Hesselink ,  R. Fabian W. Pease ,  Piero Pianetta ,  Juan R. Maldonado ,  Yao-Te Cheng ,  Jason Ryan

IPC: H01J35/06 ,  H01J35/14 ,  H01J35/02

CPC classification number: H01J35/02 ,  H01J35/06 ,  H01J35/065 ,  H01J35/14 ,  H01J2235/087

Abstract: A photo-emitter x-ray source is provided that includes a photocathode electron source, a laser light source, where the laser light source illuminates the photocathode electron source to emit electrons, and an X-ray target, where the emitted electrons are focused on the X-ray target, where the X-ray target emits X-rays. The photocathode electron source can include alkali halides (such as CsBr and CsI), semiconductors (such as GaAs, InP), and theses materials modified with rare Earth element (such as Eu) doping, electron beam bombardment, and X-ray irradiation, and has a form factor that includes planar, patterned, or optically patterned. The X-ray target includes a material such as tungsten, copper, rhodium or molybdenum. The laser light source is pulsed or configured by light modulators including acousto-optics, mode-locking, micro-mirror array, and liquid crystals, the photocathode electron source includes a nano-aperture or nano-particle arrays, where the nano-aperture is a C-aperture or a circular aperture.

Abstract translation: 提供了一种光发射器x射线源，其包括光电阴极电子源，其中激光源照射光电阴极电子源发射电子的激光源，以及发射的电子聚焦在其上的X射线靶 X射线靶，其中X射线靶发射X射线。 光电阴极电子源可以包括碱金属卤化物（例如CsBr和CsI），半导体（例如GaAs，InP），以及用稀土元素（如Eu）掺杂，电子束轰击和X射线照射改性的这些材料， 并且具有包括平面，图案化或光学图案化的形状因子。 X射线靶包括诸如钨，铜，铑或钼的材料。 激光光源由包括声光，锁模，微镜阵列和液晶的光调制器脉冲或配置，光电阴极电子源包括纳米孔径或纳米颗粒阵列，其中纳米孔径 C孔或圆形孔。