公开(公告)号：US20130221495A1

公开(公告)日：2013-08-29

申请号：US13721496

申请日：2012-12-20

Applicant: The Hong Kong University of Science and Technology

Inventor： Man WONG ,  Fan ZENG

IPC: H01L21/461 ,  H01L29/16

CPC classification number: H01L21/461 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00828 ,  B01J2219/00837 ,  B01J2219/0086 ,  B01L3/502707 ,  B01L2300/0816 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C1/00071 ,  B81C2201/0116 ,  B81C2201/0178 ,  H01L29/16

Abstract: Described herein is a microchannel that is formed beneath and parallel to a surface of a silicon substrate. Silicon migration technology is utilized to form a microchannel that is buried beneath the surface of the silicon substrate. Etching opens at least one end of the microchannel. Oxidization is utilized through the open end of the microchannel to facilitate a controlled diameter of the microchannel.

Abstract translation: 这里描述的是形成在硅衬底的表面下方并平行于其的表面的微通道。 利用硅迁移技术形成埋在硅衬底表面下方的微通道。 蚀刻打开微通道的至少一端。 通过微通道的开口端利用氧化，以促进微通道的受控直径。