Patent search ap:("The Regents of the University of California") AND inv:"Abdullah Alhassan" Page 1

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发明申请
REDUCTION IN LEAKAGE CURRENT AND INCREASE IN EFFICIENCY OF III-NITRIDE LEDS BY SIDEWALL PASSIVATION USING ATOMIC LAYER DEPOSITION 有权

公开(公告)号：US20210193871A1

公开(公告)日：2021-06-24

申请号：US16757920

申请日：2018-10-31

Applicant: The Regents of the University of California

Inventor： Matthew S. Wong , David Hwang , Abdullah Alhassan , Steven P. DenBaars

IPC: H01L33/32 , H01L33/00 , H01L33/14 , H01L33/44

Abstract: A reduction in leakage current and an increase in efficiency of III-nitride LEDs is obtained by sidewall passivation using atomic layer deposition of a dielectric. Atomic layer deposition is a hydrogen-free deposition method, which avoids problems associated with the effects of hydrogen on passivation and transparency.

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