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1.发明申请公开(公告)号：US20170133597A1
公开(公告)日：2017-05-11
申请号：US15349920
申请日：2016-11-11
Applicant: The Regents of the University of California
Inventor： Byoung Hoon Lee , Ben B. Y. Hsu , Chan Luo , Ming Wang , Guillermo C. Bazan , Alan J. Heeger
CPC classification number: H01L51/0036 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/146 , C08G2261/212 , C08G2261/228 , C08G2261/3243 , C08G2261/3246 , C08G2261/344 , C08G2261/51 , C08G2261/92 , H01L27/283 , H01L51/0003 , H01L51/0043 , H01L51/0545 , H01L51/0558
Abstract: One or more embodiments of the present invention report here a comparative study of field effect transistors (FETs) fabricated with semiconducting polymer PBT, regioregular semiconducting polymers, PCDTPT and their fluorinated analogue (P2F, PCDTFBT), in the transistor channel. The present invention shows that simple fluorination of PBT and PCDTPT to PCDTFBT leads to air-stability and reliable transistor characteristics. The FETs fabricated from aligned PCDTFBT yielded stable threshold voltages (at zero volt) and a narrow distribution of saturation hole mobilities of 65 cm2 V−1 s−1 (average over 50 independent FET devices). At higher source-drain voltage (higher electric field in the channel) the mobility approaches 100 cm2 V−1 s−1, the highest value for semiconducting polymers reported to date. High mobility is retained over 150 hours in ambient air without any encapsulation layers. The results obtained in one or more embodiments of the invention represent important progress for solution-processed plastic transistors, and provide molecular design guidelines for high-mobility and air-stable conjugated polymers.
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公开(公告)号：US10186661B2
公开(公告)日：2019-01-22
申请号：US15058994
申请日：2016-03-02
Applicant: The Regents of the University of California
Inventor： Shrayesh N. Patel , Edward J. Kramer , Michael L. Chabinyc , Chan Luo , Alan J. Heeger
Abstract: A method for enhancing charge carrier mobility of a field-effect transistor device. The method comprises generating uniaxial nanogrooves on a substrate and blade coating a solution comprising a semiconducting polymer onto the substrate. The polymer solution is spread onto the substrate in a direction parallel to the nanogrooves and a main-chain axis of the polymer is parallel to the nanogrooves. The semiconducting polymer can be then annealed, so that a polymer film is formed which is layered on top of the substrate, with polymer chains aligned parallel to a direction of charge carrier movement.
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3.发明申请BLADE COATING ON NANOGROOVED SUBSTRATES YIELDING ALIGNED THIN FILMS OF HIGH MOBILITY SEMICONDUCTING POLYMERS 审中-公开纳米基板上的刀片涂层高活性半导体聚合物的接合薄膜公开(公告)号：US20160260900A1
公开(公告)日：2016-09-08
申请号：US15058994
申请日：2016-03-02
Inventor： Shrayesh N. Patel , Edward J. Kramer , Michael L. Chabinyc , Chan Luo , Alan J. Heeger
CPC classification number: H01L51/0003 , H01L51/0012 , H01L51/0026 , H01L51/0043 , H01L51/0558
Abstract: A method for enhancing charge carrier mobility of a field-effect transistor device. The method comprises generating uniaxial nanogrooves on a substrate and blade coating a solution comprising a semiconducting polymer onto the substrate. The polymer solution is spread onto the substrate in a direction parallel to the nanogrooves and a main-chain axis of the polymer is parallel to the nanogrooves. The semiconducting polymer can be then annealed, so that a polymer film is formed which is layered on top of the substrate, with polymer chains aligned parallel to a direction of charge carrier movement.
Abstract translation: 一种用于增强场效应晶体管器件的载流子迁移率的方法。 该方法包括在衬底上产生单轴纳米岩，并将包含半导体聚合物的溶液涂覆到衬底上。 聚合物溶液在平行于纳米辊的方向上铺展在基底上，聚合物的主链轴平行于纳米罗。 然后可以将半导体聚合物退火，从而形成聚合物膜，该聚合物膜层叠在基底的顶部上，聚合物链平行于电荷载体运动方向排列。
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