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公开(公告)号:US20220223429A1
公开(公告)日:2022-07-14
申请号:US17352139
申请日:2021-06-18
Applicant: The Regents of the University of California
Inventor: Brian Romanczyk , Emmanuel Kayede , Wenjian Liu , Islam Sayed , Umesh K. Mishra
IPC: H01L21/306 , H01L29/20 , H01L29/205 , H01L29/47 , H01L29/778 , H01L29/872 , H01L21/285 , H01L21/308 , H01L29/66 , H01L29/34
Abstract: N-polar transistor structures have relied on the use of dry etch processes that use plasmas generated from gaseous species to remove III-N layers as commercially viable wet etchants do not exist. The present disclosure reports on methods for the fabrication of N-polar III-N transistors using wet etches along with transistor structures that are enabled by the availability of wet-etches.