公开(公告)号：US20220223429A1

公开(公告)日：2022-07-14

申请号：US17352139

申请日：2021-06-18

Applicant: The Regents of the University of California

Inventor： Brian Romanczyk ,  Emmanuel Kayede ,  Wenjian Liu ,  Islam Sayed ,  Umesh K. Mishra

IPC: H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/778 ,  H01L29/872 ,  H01L21/285 ,  H01L21/308 ,  H01L29/66 ,  H01L29/34

Abstract: N-polar transistor structures have relied on the use of dry etch processes that use plasmas generated from gaseous species to remove III-N layers as commercially viable wet etchants do not exist. The present disclosure reports on methods for the fabrication of N-polar III-N transistors using wet etches along with transistor structures that are enabled by the availability of wet-etches.