METHOD OF FORMING A SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20200168658A1

    公开(公告)日:2020-05-28

    申请号:US16564254

    申请日:2019-09-09

    Abstract: Systems and methods including bonding two or more separately formed circuit layers are provided using, for example, cold welding techniques. Processing techniques may be provided for combining inorganic and/or organic semiconductor devices in apparatus including, for example, microchips, optoelectronic devices, such as solar cells, photodetectors and organic light emitting diodes (OLEDs), and other apparatus with multi-layer circuitry. Methods of bonding preformed circuit layers may include the use of stamping and pressure bonding contacts of two or more circuit layers together. Such methods may find applicability, for example, in bonding circuitry to shaped substrates, including various rounded and irregular shapes, and may be used to combine devices with different structural properties, e.g. from different materials systems.

    Method of forming a semiconductor device

    公开(公告)号:US10971542B2

    公开(公告)日:2021-04-06

    申请号:US16564254

    申请日:2019-09-09

    Abstract: Systems and methods including bonding two or more separately formed circuit layers are provided using, for example, cold welding techniques. Processing techniques may be provided for combining inorganic and/or organic semiconductor devices in apparatus including, for example, microchips, optoelectronic devices, such as solar cells, photodetectors and organic light emitting diodes (OLEDs), and other apparatus with multi-layer circuitry. Methods of bonding preformed circuit layers may include the use of stamping and pressure bonding contacts of two or more circuit layers together. Such methods may find applicability, for example, in bonding circuitry to shaped substrates, including various rounded and irregular shapes, and may be used to combine devices with different structural properties, e.g. from different materials systems.

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